UMX5NTR Rohm Semiconductor, UMX5NTR Datasheet

UMX5NTR

Manufacturer Part Number

UMX5NTR

Description

TRANS DUAL NPN 11V 50MA SOT-363

Manufacturer

Rohm Semiconductor

Datasheet

1.IMX5T108.pdf (3 pages)

Specifications of UMX5NTR

Transistor Type

2 NPN (Dual)

Current - Collector (ic) (max)

50mA

Voltage - Collector Emitter Breakdown (max)

11V

Vce Saturation (max) @ Ib, Ic

500mV @ 5mA, 10mA

Dc Current Gain (hfe) (min) @ Ic, Vce

56 @ 5mA, 10V

Power - Max

150mW

Frequency - Transition

3.2GHz

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Module Configuration

Dual

Transistor Polarity

NPN

Collector Emitter Voltage V(br)ceo

11V

Gain Bandwidth Ft Typ

3.2MHz

Power Dissipation Pd

150mW

Dc Collector Current

50mA

Operating Temperature

RoHS Compliant

Configuration

Dual

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

11 V

Emitter- Base Voltage Vebo

3 V

Continuous Collector Current

50 mA

Maximum Dc Collector Current

0.05 A

Power Dissipation

150 mW

Maximum Operating Frequency

3200 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

Gain Bandwidth Product Ft

3.2 GHz

Dc Current Gain Hfe

Operating Temperature Range

-55Â°C

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

UMX5NTR

Manufacturer:

ROHM/罗姆

Quantity:

20 000

Current page: 1 of 3
Download datasheet (164Kb)

High transition frequency (dual transistors)

Features

1) Two 2SC3838K chips in a EMT or UMT or SMT package.

2) High transition frequency. (f

3) Low output capacitance. (Cob=0.9pF)

Inner circuits

Absolute maximum ratings (Ta=25C)

∗1 120mW per element must not be exceeded.

∗2 200mW per element must not be exceeded.

Package, marking, and packaging specifications

This product might cause chip aging and breakdown under the large electrified environment.

Please consider to design ESD protection circuit.

○

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

www.rohm.com

Basic ordering unit (pieces)

EMX5 / UMX5N / IMX5

EMX5 / UMX5N

(4)

(3)

(5)

(2)

Package

Marking

Code

Type

Parameter

(1)

(6)

EMX5 / UMX5N

IMX5

(3)

EMX5

EMT6

8000

T2R

(4)

(2)

Symbol

(5)

Tstg

CBO

CEO

EBO

=3.2GHz)

(6)

(1)

UMX5N

UMT6

3000

150(TOTAL)

300(TOTAL)

−55 to +150

Limits

150

SMT6

IMX5

T108

3000

Unit

°C

∗1

∗2

1/2

Dimensions (Unit : mm)

EMX6

ROHM : EMT6

UMX5N

ROHM : UMT6

EIAJ : SC-88

IMX5

ROHM : SMT6

EIAJ : SC-74

Each lead has same dimensions

2010.09 - Rev.C

Related parts for UMX5NTR

UMX5NTR Summary of contents

Page 1

High transition frequency (dual transistors) EMX5 / UMX5N / IMX5 Features 1) Two 2SC3838K chips in a EMT or UMT or SMT package. 2) High transition frequency. (f =3.2GHz Low output capacitance. (Cob=0.9pF) Inner circuits EMX5 / UMX5N ...

Page 2

EMX5 / UMX5N / IMX5 Electrical characteristics (Ta=25C) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage V Transition frequency Output capacitance ∗Transition frequency of ...

Page 3

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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