IMX5T108 Rohm Semiconductor, IMX5T108 Datasheet - Page 2

• Manufacturer Part Number: IMX5T108
• Description: TRANS DUAL NPN 11V 50MA SOT-457
• Manufacturer: Rohm Semiconductor

Specifications of IMX5T108

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 11V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 56 @ 5mA, 10V
• Power - Max: 300mW
• Frequency - Transition: 3.2GHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Module Configuration: Dual
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 11V
• Gain Bandwidth Ft Typ: 3.2GHz
• Power Dissipation Pd: 300mW
• Dc Collector Current: 50mA
• Transistor Case: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 11 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 50 mA
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 3200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 56
• Gain Bandwidth Product Ft: 3.2 GHz
• Dc Current Gain Hfe: 56
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: IMX5T108; IMX5T108TR

Electrical characteristics (Ta=25C)
∗Transition frequency of the device.
Electrical characteristics curves
○
EMX5 / UMX5N / IMX5
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
c
www.rohm.com
Fig.1 DC current gain vs. collector current
Fig.4 Capacitance vs. reverse bias voltage
500
200
100
50
20
10
2010 ROHM Co., Ltd. All rights reserved.
5.0
2.0
1.0
0.5
0.2
0.1
0.1
0.1
COLLECTOR TO BASE VOLTAGE : V
0.2
COLLECTOR CURRENT : I
0.2
0.5
0.5
Parameter
1
1
2
2
5
5
10
C
V
10
Ta=25°C
(mA)
CE
Ta=25°C
I
f =1MHz
E
20
=10V
=0A
20
Cob
Cre
CB
(V)
50
50
Symbol
V
BV
BV
BV
Cob
I
I
CE(sat)
h
CBO
EBO
f
FE
CBO
CEO
T
EBO
Fig.2 Collector-emitter saturation voltage
Fig.5 Collector to base time constant
500
200
100
5.0
2.0
1.0
50
20
10
50
20
10
0.1
0.1
Min.
vs. collector current
1.4
20
11
56
0.2
0.2
vs. collector current characteristics
3
−
−
−
−
Ic/I
Ic/I
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
B
B
=10
=2
0.5
0.5
Typ.
3.2
0.9
−
−
−
−
−
−
−
1
1
2
2
2/2
Max.
1.55
120
0.5
0.5
0.5
−
−
−
−
5
5
10
Ta=25°C
V
f=31.8MHz
10
C
C
CE
Ta=25°C
(mA)
(mA)
=10V
20
20
GHz
Unit
μA
μA
pF
V
V
V
−
V
50
50
I
I
I
V
V
V
I
V
V
C
C
E
C
=10μA
CB
EB
CE
CE
CB
=10μA
=1mA
/I
B
=2V
=10V
/I
/I
/f=10V/1MHz, I
=10mA/5mA
C
E
=10V/−10mA, f=500MHz
=10V/5mA
Conditions
Fig.3 Gain bandwidth product vs. emitter current
Fig.6 Noise factor vs. collector current characteristics
5.0
2.0
1.0
0.5
0.2
0.1
20
10
0
−0.1
0.1
E
V
Ta=25°C
=0A
CE
−0.2
0.2
=10V
COLLECTOR CURRENT : I
EMITTER CURRENT : I
−0.5
0.5
−1 −2
1
∗
2
2010.09 - Rev.C
−5
5
E
−10 −20
10
(mA)
C
Ta=25°C
V
f =500MHz
(mA)
CE
Data Sheet
=6V
20
−50
50