IMX8T108 Rohm Semiconductor, IMX8T108 Datasheet
IMX8T108
Manufacturer Part Number
IMX8T108
Description
TRANS DUAL NPN 120V 50MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet
1.IMX8T108.pdf
(3 pages)
Specifications of IMX8T108
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
120V
Vce Saturation (max) @ Ib, Ic
500mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 2mA, 6V
Power - Max
300mW
Frequency - Transition
140MHz
Mounting Type
Surface Mount
Package / Case
SC-74-6
Configuration
Dual
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
120 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
50 mA
Maximum Dc Collector Current
0.05 A
Power Dissipation
300 mW
Maximum Operating Frequency
140 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
180
Gain Bandwidth Product Ft
140 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
IMX8T108TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IMX8T108
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
General purpose (dual transistors)
IMX8
1) Two 2SC3906K chips in an SMT package.
2) High breakdown voltage.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
∗
Features
Package, marking, and packaging specifications
Equivalent circuit
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Tr
Transition frequency of the device
200mW per element must not be exceeded.
Basic ordering unit (pieces)
2
(3)
(4)
(2)
(5) (6)
Parameter
Package
Part No.
Marking
(1)
Code
Tr
Parameter
1
Symbol
V
V
V
Tstg
Pc
Tj
CBO
CEO
EBO
I
C
SMT6
IMX8
T108
3000
X8
Symbol
V
BV
BV
BV
I
I
CE(sat)
CBO
EBO
h
f
CBO
CEO
EBO
FE
T
300(TOTAL)
−55 to +150
Limits
120
120
150
50
5
Min.
120
120
180
5
−
−
−
−
External dimensions (Unit : mm)
Typ.
140
−
−
−
−
−
−
−
ROHM : SMT6
EIAJ : SC-74
Unit
mW
mA
Max.
°C
°C
820
V
V
V
0.5
0.5
0.5
−
−
−
−
MHz
Unit
µA
µA
∗
V
V
V
V
−
0.3Min.
I
I
I
V
V
V
V
I
C
C
E
C
CB
EB
CE
CE
=50µA
=1mA
=50µA
/I
B
=4V
=100V
=6V, I
=12V, I
=10mA/1mA
1.6
2.8
C
=2mA
E
= −2mA, f=100MHz
Each lead has same dimensions
Rev.A
Conditions
IMX8
1/2
∗
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IMX8T108 Summary of contents
Page 1
Transistors General purpose (dual transistors) IMX8 Features 1) Two 2SC3906K chips in an SMT package. 2) High breakdown voltage. Package, marking, and packaging specifications Part No. Package Marking Code Basic ordering unit (pieces) Equivalent circuit (4) (5) ( ...
Page 2
Transistors Electrical characteristics 10 25.0 22.5 8 20.0 17.5 6 15.0 12.5 10.0 4 7.5 5.0 2 2.5 =0µ Ta=25° COLLECTOR TO EMITTER VOLTAGE : V (V) CE Fig.1 Ground emitter output ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...