IMZ1AT108 Rohm Semiconductor, IMZ1AT108 Datasheet

TRANS NPN/PNP 50V 150MA SOT-457

IMZ1AT108

Manufacturer Part Number
IMZ1AT108
Description
TRANS NPN/PNP 50V 150MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of IMZ1AT108

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 1mA, 6V
Power - Max
300mW
Frequency - Transition
180MHz, 140MHz
Mounting Type
Surface Mount
Package / Case
SC-74-6
Module Configuration
Dual
Transistor Polarity
NPN / PNP
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
180MHz
Power Dissipation Pd
300mW
Dc Collector Current
150mA
Operating
RoHS Compliant
Configuration
Dual
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
+ 50 V / - 50 V
Emitter- Base Voltage Vebo
+ 7 V, - 6 V
Continuous Collector Current
+ 150 mA / - 150 mA
Maximum Dc Collector Current
0.15 A
Power Dissipation
300 mW
Maximum Operating Frequency
180 MHz at NPN, 140 MHz at PNP
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
180 MHz, 140 MHz
Dc Current Gain Hfe
120
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
IMZ1AT108TR

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Transistors
General purpose transistor
(dual transistors)
EMZ1 / UMZ1N / IMZ1A
1) Both a 2SA1037AK chip and 2SC2412K chip in a
2) Mounting possible with EMT3 or UMT3 or SMT3
3) Transistor elements are independent, eliminating
4) Mounting cost and area can be cut in half.
NPN / PNP epitaxial planar silicon transistor
Power
dissipation
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Features
Structure
Equivalent circuit
Absolute maximum ratings (Ta = 25°C)
EMT or UMT or SMT package.
automatic mounting machines.
interference.
EMZ1 / UMZ1N
Tr
Parameter
2
(4)
(3)
EMZ1, UMZ1N
IMZ1A
(5)
(2)
Tr
(1)
(6)
1
Symbol
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
C
C
IMZ1A
150 (TOTAL)
300 (TOTAL)
−55 to +150
150
Tr
Tr
60
50
7
2
1
Limits
150
(3)
(4)
−150
−60
−50
(5)
(2)
Tr
−6
2
Tr
(1)
(6)
1
Unit
mW
mA
˚C
˚C
V
V
V
∗ 1
∗ 2
External dimensions (Unit : mm)
EMZ1
ROHM : EMT6
UMZ1N
ROHM : UMT6
EIAJ : SC-88
ROHM : SMT6
EIAJ : SC-74
IMZ1A
0.3to0.6
0.1Min.
EMZ1 / UMZ1N / IMZ1A
Abbreviated symbol : Z1
Abbreviated symbol : Z1
Abbreviated symbol : Z1
( 4 )
( 5 )
( 6 )
1.6
2.8
1.25
1.2
1.6
2.1
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
( 3 )
( 2 )
( 1 )
Rev.A
1/4

Related parts for IMZ1AT108

IMZ1AT108 Summary of contents

Page 1

Transistors General purpose transistor (dual transistors) EMZ1 / UMZ1N / IMZ1A Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. ...

Page 2

Transistors Electrical characteristics (Ta = 25°C) Tr (NPN) 1 Parameter Symbol Collector-base breakdown voltage BV CBO Collector-emitter breakdown voltage BV CEO Emitter-base breakdown voltage BV EBO Collector cutoff current I CBO Emitter cutoff current I EBO Collector-emitter saturation voltage V ...

Page 3

Transistors 500 Ta=25˚C V =5V 200 100 0.2 0 100 200 (mA) COLLECTOR CURRENT : I C Fig.4 DC current gain vs. collector current ( I ) 0.5 ...

Page 4

Transistors Tr (PNP) 2 −50 − Ta=100˚C −20 25˚C − 40˚C −10 −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 (V) BASE TO EMITTER VOLTAGE : V BE Fig.12 Grounded ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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