IMT1AT110 Rohm Semiconductor, IMT1AT110 Datasheet

TRANS DUAL PNP 50V 150MA SOT-457

IMT1AT110

Manufacturer Part Number
IMT1AT110
Description
TRANS DUAL PNP 50V 150MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of IMT1AT110

Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 1mA, 6V
Power - Max
300mW
Frequency - Transition
140MHz
Mounting Type
Surface Mount
Package / Case
SC-74-6
Module Configuration
Dual
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
140MHz
Power Dissipation Pd
300mW
Dc Collector Current
-150mA
Operating Temperature
RoHS Compliant
Configuration
Dual
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 50 V
Emitter- Base Voltage Vebo
- 6 V
Continuous Collector Current
- 150 mA
Maximum Dc Collector Current
0.15 A
Power Dissipation
300 mW
Maximum Operating Frequency
140 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
140 MHz
Dc Current Gain Hfe
120
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
IMT1AT110
IMT1AT110TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IMT1AT110
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Part Number:
IMT1AT110
0
Transistors
General Purpose Transistor
(Isolated Dual Transistors)
EMT1 / UMT1N / IMT1A
1) Two 2SA1037AK chips in a EMT or UMT or SMT
2) Mounting possible with EMT3 or UMT3 or SMT3
3) Transistor elements are independent,
Epitaxial planar type
PNP silicon transistor
The following characteristics apply to both
Tr
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
Features
Structure
Equivalent circuit
Absolute maximum ratings (Ta = 25°C)
1
automatic mounting machines.
eliminating interference.
EMT1 / UMT1N
and Tr
package.
Tr
2
(4)
(3)
2
Parameter
.
(2)
(5)
EMT1, UMT1N
IMT1A
Tr
(6)
(1)
1
Symbol
V
V
V
IMT1A
Tstg
P
CBO
CEO
I
Tj
EBO
C
C
Tr
2
(4)
(3)
150 (TOTAL)
300 (TOTAL)
−55 to +150
(5)
(2)
Limits
−150
−60
−50
150
Tr
−6
(6)
(1)
1
Unit
mW
mA
°C
°C
V
V
V
1
2
Dimensions (Unit : mm)
EMT1
ROHM : EMT6
UMT1N
ROHM : UMT6
EIAJ : SC-88
IMT1A
ROHM : SMT6
EIAJ : SC-74
(4)
(3)
(6) (5) (4)
(1) (2) (3)
(6) (5) (4)
(1) (2) (3)
(5)
(2)
EMT1 / UMT1N / IMT1A
Abbreviated symbol : T1
Abbreviated symbol : T1
Abbreviated symbol : T1
(6)
(1)
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
Rev.C
1
/
3

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IMT1AT110 Summary of contents

Page 1

Transistors General Purpose Transistor (Isolated Dual Transistors) EMT1 / UMT1N / IMT1A Features 1) Two 2SA1037AK chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements ...

Page 2

Transistors Electrical characteristics (Ta = 25°C) Parameter Symbol BV Collector-base breakdown voltage BV Collector-emitter breakdown voltage BV Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current V Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Packaging specifications ...

Page 3

Transistors - -0.5 -0 100°C 25°C -0.1 -40°C -0.05 -0.2 -0 -10 -20 -50 -100 (mA) COLLECTOR CURRENT : I C Fig.7 Collector-emitter saturation voltage vs. collector current ( ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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