UMZ2NTR Rohm Semiconductor, UMZ2NTR Datasheet - Page 2

• Manufacturer Part Number: UMZ2NTR
• Description: TRANS NPN/PNP 50V 150MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMZ2NTR

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 180MHz, 140MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 50 V / + 50 V
• Emitter- Base Voltage Vebo: - 6 V, + 7 V
• Continuous Collector Current: - 150 mA / + 150 mA
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 180 MHz at NPN, 140 MHz at PNP
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 140 MHz, 180 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Transistors
PNP Tr
∗
Tr
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Tr
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
Electrical characteristics (Ta=25°C)
Electrical characteristics curves
Fig.1 Grounded emitter propagation
1
2
Transition frequency of the device.
Transition frequency of the device.
−0.5
−0.2
−0.1
(PNP)
(NPN)
−50
−20
−10
−5
−2
−1
−0.2
Ta=100˚C
characteristics
BASE TO EMITTER VOLTAGE : V
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
−40˚C
Parameter
Parameter
25˚C
V
CE
Symbol
Symbol
BV
BV
V
BV
BV
V
BV
BV
= −6V
BE
Cob
Cob
I
I
I
I
CE(sat)
h
CE(sat)
h
CBO
EBO
CBO
EBO
f
f
FE
FE
CBO
CEO
EBO
T
CBO
CEO
EBO
T
(
V)
Min.
−60
−50
120
Min.
120
−6
60
50
−
−
−
−
−
7
−
−
−
−
−
−10
−8
−6
−4
−2
Fig.2 Grounded emitter output
0
COLLECTOR TO MITTER VOLTAGE : V
Typ.
Typ.
Ta=25˚C
140
180
−
−
−
−
−
−
−
4
−
−
−
−
−
−
−
2
characteristics (I)
−0.4
Max.
−0.1
−0.1
−0.5
Max.
560
560
0.1
0.1
0.4
3.5
−
−
−
−
5
−
−
−
−
−0.8
MHz
MHz
Unit
Unit
µA
µA
pF
µA
µA
pF
V
V
V
V
−
V
V
V
V
−
−1.2
V
V
V
V
I
I
I
V
V
I
V
I
I
I
V
V
I
V
C
C
E
C
C
C
E
C
CE
CB
CE
CB
CB
EB
CE
CB
EB
CE
/I
/I
= −50µA
= −1mA
= −50µA
= 50µA
= 1mA
= 50µA
B
B
= −12V , I
= −12V , I
= 12V , I
= 12V , I
= −60V
= −6V
= −6V , I
= 60V
= 7V
= 6V , I
= −50mA/−5mA
= 50mA/5mA
−1.6
−31.5
−28.0
−24.5
−17.5
−14.0
−10.5
−21.0
−35.0
−3.5µA
−7.0
C
E
E
I
C
= 1mA
B
E
E
=0
= −2mA , f = 100MHz
= 0A , f = 1MHz
= −1mA
CE
= 2mA , f = 100MHz
= 0A , f = 1MHz
Conditions
Conditions
−2.0
(
V)
EMZ2 / UMZ2N / IMZ2A
−100
−80
−60
−40
−20
COLLECTOR TO EMITTER VOLTAGE : V
Fig.3 Grounded emitter output
0
Ta=25˚C
−500
−450
−400
−350
−300
characteristics (II)
∗
∗
−1
Rev.A
−2
−3
−4
−50µA
−250
−200
−150
−100
I
B
=0
CE
2/4
(
V)
−5