UMX1NTN Rohm Semiconductor, UMX1NTN Datasheet - Page 3

• Manufacturer Part Number: UMX1NTN
• Description: TRANS DUAL NPN 50V 150MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMX1NTN

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 180MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 150mA
• Operating Temperature: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 7 V
• Continuous Collector Current: 150 mA
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 180 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 180 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: UMX1NTNTR

Transistors
0.05
0.02
0.01
500
200
100
500
200
100
Fig.7 Collector-emitter saturation
0.5
0.2
0.1
50
20
10
50
−0.5
Fig.4 DC current gain vs. collector
0.2
0.2
Fig.10 Gain bandwidth product vs.
Ta=25˚C
0.5 1
0.5
COLLECTOR CURRENT : I
−1
COLLECTOR CURRENT : I
voltage vs. collector current ( I )
current ( I )
EMITTER CURRENT : I
emitter current
1
−2
2
I
C
2
/I
B
=50
−5
10
5
20
5
10 20
V
10
−10
CE
=5V
3V
1V
20
−20
E
50 100 200
C
(mA)
C
(mA)
50 100 200
Ta=25˚C
V
(mA)
Ta=25 ˚C
CE
−50 −100
=6V
Fig.11 Collector output capacitance vs.
Fig.8 Collector-emitter saturation
0.05
0.02
0.01
500
200
100
0.5
0.2
0.1
50
20
10
Fig.5 DC current gain vs. collector
0.2
0.2
20
10
5
2
1
0.2
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
voltage vs. collector current ( II )
0.5
Emitter input capacitance vs.
0.5
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
collector-base voltage
emitter-base voltage
current ( II )
Ta=100˚C
0.5
1
1
−55˚C
25˚C
2
1
2
Ta=100˚C
5
2
5
−55˚C
25˚C
10 20
10
5
20
10
50 100 200
C
C
50 100 200
V
(mA)
(mA)
Ta=25˚C
f = 1MHz
I
I
CE
I
C
E
C
=0A
=0A
/I
20
= 5V
: V
B
=10
CB
EB
(V)
(V)
50
EMX1 / UMX1N / IMX1
Fig.12 Base-collector time constant vs.
200
100
0.05
0.02
0.01
0.05
0.02
0.01
0.5
0.2
0.1
Fig.9 Collector-emitter saturation
50
20
10
−0.2
0.5
0.2
0.1
0.2
Fig.6 Collector-emitter saturation
0.2
emitter current
COLLECTOR CURRENT : I
0.5 1
voltage vs. collector current ( III )
EMITTER CURRENT : I
0.5
COLLECTOR CURRENT : I
voltage vs. collector current
−0.5
Ta=100˚C
I
C
1
/I
B
−55˚C
=50
25˚C
20
10
2
2
−1
5
5
10 20
−2
10
E
(mA)
20
C
50 100 200
C
Ta=25 ˚C
f=32MH
V
(mA)
I
−5
Ta=25˚C
(mA)
C
CB
/I
=6V
B
=50
50 100
3/3
Z
−10