UMT1NTN Rohm Semiconductor, UMT1NTN Datasheet - Page 2

• Manufacturer Part Number: UMT1NTN
• Description: TRANS DUAL PNP 50V 150MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMT1NTN

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -50V
• Gain Bandwidth Ft Typ: 140MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: -150mA
• Operating Temperature: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 150 mA
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 140 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 140 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: UMT1NTNTR

Transistors
Type
EMT1
UMT1N
IMT1A
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Electrical characteristics (Ta = 25°C)
Packaging specifications
Electrical characteristic curves
Fig.1 Grounded emitter propagation
500
200
100
-0.5
-0.2
-0.1
-50
-20
-10
50
Fig.4 DC current gain vs. collector
-5
-2
-1
-0.2
Ta = 100°C
Ta = 25°C
-0.2
BASE TO EMITTER VOLTAGE : V
characteristics
COLLECTOR CURRENT : I
-0.5
current ( Ι )
−
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
25°C
40°C
-1
Parameter
Package
Code
Basic ordering unit (pieces)
-2
V
CE
-5
= -5V
-3V
-1V
-10 -20
C
V
(mA)
CE
-50 -100
= −6V
BE
(V)
Symbol
BV
BV
BV
V
Cob
I
I
h
CE(sat)
CBO
EBO
f
FE
CBO
CEO
EBO
T
8000
T2R
−
−
-10
-8
-6
-4
-2
500
200
100
Min.
COLLECTOR TO EMITTER VOLTAGE : V
−60
−50
120
0
Fig.5 DC current gain vs. collector
50
−6
-0.2
−
−
−
−
−
Fig.2 Grounded emitter output
Ta = 25°C
-0.5
COLLECTOR CURRENT : I
current ( ΙΙ )
-0.4
Taping
3000
Typ.
characteristics ( Ι )
140
TN
−
−
−
−
−
−
−
−
−
4
-1
Ta = 100°C
-0.8
-2
Max.
−0.1
−0.1
−0.5
560
-40°C
25°C
−
−
−
−
5
T110
3000
-5
−
−
-1.2
-10 -20
MHz
Unit
µA
µA
pF
V
V
V
V
−
-1.6
-31.5
-28.0
-24.5
-17.5
-14.0
-10.5
-21.0
-35.0
-3.5µA
-7.0
C
V
(mA)
I
CE
B
= 0
I
I
I
V
V
I
V
V
V
= -6V
-50 -100
C
C
E
C
CB
EB
CE
CE
CB
CE
/I
-2.0
= −50µA
= −1mA
= −50µA
B
(V)
= −60V
= −6V
= −6V, I
= −12V, I
= −12V, I
= −50mA/−5mA
EMT1 / UMT1N / IMT1A
C
E
E
= −1mA
Conditions
-100
= 2mA, f = 100MHz
= 0A, f = 1MHz
-0.05
Fig.6 Collector-emitter saturation
-80
-60
-40
-20
-0.5
-0.2
-0.1
COLLECTOR TO EMITTER VOLTAGE : V
0
-1
-0.2
Ta = 25°C
Fig.3 Grounded emitter output
-500
-450
-400
-350
-300
voltage vs. collector current ( Ι )
-0.5
COLLECTOR CURRENT : I
-1
characteristics ( ΙΙ )
-1
I
C
/I
B
-2
-2
Rev.C
= 50
20
10
-5
-3
-10
-20
-4
C
-50µA
Ta = 25°C
(mA)
-250
-200
-150
-100
I
B
-50 -100
= 0
CE
-5
2
(V)
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