UMY1NTR Rohm Semiconductor, UMY1NTR Datasheet - Page 2

• Manufacturer Part Number: UMY1NTR
• Description: TRANS NPN/PNP 50V 150MA SOT-353
• Manufacturer: Rohm Semiconductor

Specifications of UMY1NTR

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 180MHz, 140MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 180MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 150mA
• Operating: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 50 V, 50 V
• Emitter- Base Voltage Vebo: - 6 V, + 7 V
• Continuous Collector Current: - 150 mA, 150 mA
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 180 MHz at NPN, 140 MHz at PNP
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 140 MHz, 180 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Transistors
Tr
Tr
Tr
Type
EMY1
UMY1N
FMY1
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Electrical characteristics (Ta = 25°C)
Packaging specifications
Electrical characteristic curves
1
2
1
−0.5
−0.2
−0.1
−50
−20
−10
(PNP)
(PNP)
(NPN)
−5
−2
−1
Fig.1 Grounded emitter propagation
−0.2
Ta=100˚C
BASE TO EMITTER VOLTAGE : V
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
−
characteristics
25˚C
40˚C
Parameter
Parameter
Packaging type
Code
Basic ordering
unit (pieces)
V
8000
T2R
CE
Symbol
Symbol
BV
BV
BV
BV
BV
V
BV
V
=
Cob
Cob
BE
I
I
I
I
CE (sat)
h
CE (sat)
h
−
CBO
EBO
CBO
EBO
f
f
6V
FE
FE
CBO
CEO
EBO
CBO
CEO
EBO
T
T
(V)
Min.
Min.
−60
−50
120
120
Taping
−6
60
50
3000
−
−
−
−
−
7
−
−
−
−
−
TR
−10
Typ. Max. Unit
Typ. Max. Unit
140
180
−8
−6
−4
−2
COLLECTOR TO EMITTER VOLTAGE : V
−
−
−
−
−
−
−
4
−
−
−
−
−
−
−
2
0
Ta=25˚C
Fig.2 Grounded emitter output
T148
3000
−0.1
−0.1
−0.5
560
560
0.1
0.1
0.4
3.5
−
−
−
−
5
−
−
−
−
−0.4
characteristics ( I )
MHz
MHz
PF
PF
µA
µA
µA
µA
V
V
V
V
V
V
V
V
−
−
−0.8
I
I
I
V
V
I
V
V
V
I
I
I
V
V
I
V
V
V
C
C
E
C
C
C
E
C
= −50µA
CB
EB
CE
= 50µA
CB
EB
CE
= −50µA
= −1mA
/I
CE
CB
= 50µA
= 1mA
/I
CE
CB
B
B
= − 6 V
=7 V
= −60V
= −6V, I
= −12V, I
= −12V, I
= 60V
= 6V, I
= 12V, I
= 12V, I
= −50mA/−5mA
= 50mA/5mA
−1.2
C
= 1mA
C
E
E
= −1mA
=− 2mA, f = 100MHz
= 0A, f = 1MHz
−1.6
E
E
Conditions
= 2mA, f = 100MHz
= 0A, f = 1MHz
Conditions
−31.5
−28.0
−24.5
−17.5
−14.0
−10.5
−21.0
−35.0
−3.5µA
−7.0
I
B
=0
CE
−2.0
(V)
EMY1 / UMY1N / FMY1A
−100
−80
−60
−40
−20
COLLECTOR TO EMITTER VOLTAGE : V
0
Ta=25˚C
Fig.3 Grounded emitter output
−500
−450
−400
−350
−300
−1
characteristics ( II )
−2
Rev.A
−3
−4
−50µA
−250
−200
−150
−100
I
B
=0
CE
2/4
(V)
−5