ZXT12P40DXTA Diodes Zetex, ZXT12P40DXTA Datasheet - Page 4

• Manufacturer Part Number: ZXT12P40DXTA
• Description: TRANS PNP DL LS -40V -2A 8-MSOP
• Manufacturer: Diodes Zetex

Specifications of ZXT12P40DXTA

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 260mV @ 100mA, 2A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V
• Power - Max: 1.04W
• Frequency - Transition: 130MHz
• Mounting Type: Surface Mount
• Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXT12P40DXTR

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
ISSUE 2 - DECEMBER 2006
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
MIN.
-50
-40
-7.5
300
300
150
= 25°C unless otherwise stated).
10
4
TYP.
-95
-80
-8.5
-155
-190
-150
450
450
300
640
25
130
97
-18
-0.80
35
-0.92
2%
MAX.
-100
-100
-100
-215
-260
-190
-1.0
-0.85
900
-22
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
ZXT12P40DX
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
f=-50MHz
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
V
B1
CB
EB
CES
CB
=-100 A
=-100 A
=-10mA*
=-0.1A, I
=-1A, I
=-2A, I
=-2A, I
=-2A, I
=-2A, V
=-10mA, V
=-1A, V
=-2A, V
=-5A, V
=-30mA, V
CC
=I
=-40V
=-6V
=-10V, f=1MHz
=-10V, I
B2
=-40V
=-20mA
B
B
B
B
CE
CE
CE
CE
=-20mA*
=-100mA*
=-200mA*
=-100mA*
B
=-10mA*
=-2V*
=-2V*
=-2V*
=-2V*
C
CE
CE
=-1A
=-2V*
=-10V