ZXTD09N50DE6TA Diodes Zetex, ZXTD09N50DE6TA Datasheet - Page 3

• Manufacturer Part Number: ZXTD09N50DE6TA
• Description: TRANS NPN DUAL LOSAT 50V SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXTD09N50DE6TA

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 270mV @ 50mA, 1A
• Current - Collector Cutoff (max): 10nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 2V
• Power - Max: 1.1W
• Frequency - Transition: 215MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXTD09N50DE6TR

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
ISSUE 2 - JUNE 2001
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer
Ratio
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
V
V
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
MIN.
50
50
5
200
300
200
75
20
= 25°C unless otherwise stated).
3
TYP.
24
60
120
160
940
850
420
450
350
130
60
215
10
150
425
MAX.
10
10
10
35
80
200
270
1100
1100
2%
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
ns
ns
ZXTD09N50DE6
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f= 100MHz
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
V
B1
CB
EB
CES = 40V
CB
= 100 A
= 100 A
= 10mA*
= 100mA, I
= 250mA, I
= 500mA, I
= 1A, I
= 1A, I
= 1A, V
=10mA, V
= 100mA, V
= 500mA, V
= 1A, V
= 1.5A, V
= 50mA, V
CC
=I
= 4V
= 40V
= 10V, f=1MHz
=10 V, I
B2
=100mA
B
B
CE
CE
= 50mA*
= 50mA*
CE
= 2V*
= 2V*
CE
C
CE
B
B
B
=2 V*
= 1A
CE
CE
= 10mA*
= 10mA*
= 10mA*
= 2V*
=10V
=2 V*
=2V*
E6