ZXTDC3M832TA Diodes Zetex, ZXTDC3M832TA Datasheet - Page 6

TRANS NPN 50V PNP 40V 8MLP

ZXTDC3M832TA

Manufacturer Part Number
ZXTDC3M832TA
Description
TRANS NPN 50V PNP 40V 8MLP
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXTDC3M832TA

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
4A, 3A
Voltage - Collector Emitter Breakdown (max)
50V, 40V
Vce Saturation (max) @ Ib, Ic
320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A
Current - Collector Cutoff (max)
25nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 2A, 2V / 60 @ 1.5A, 2V
Power - Max
1W
Frequency - Transition
165MHz, 190MHz
Mounting Type
Surface Mount
Package / Case
8-MLP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXTDC3M832TATR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXTDC3M832TA
Manufacturer:
ZETEX
Quantity:
9 000
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
ZXTDC3M832
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
MIN.
2%
-7.5
300
300
180
150
-50
-40
60
12
6
-0.97
-0.89
TYP.
-150
-195
-210
-260
-8.5
480
450
290
130
190
435
-80
-70
-25
22
19
40
(at T amb = 25°C unless otherwise stated).
MAX.
-1.05
-0.95
-220
-300
-300
-370
-25
-25
-25
-40
25
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
f=100MHz
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
EB
CES
CB
CC
=-100 A
=-10mA*
=-100 A
=-0.1A, I
=-1A, I
=-1.5A, I
=-2A, I
=-2.5A, I
=-2.5A, I
=-2.5A, V
=-10mA, V
=-0.1A, V
=-1A, V
=-1.5A, V
=-3A, V
=-50mA, V
=I
=-6V
=-40V
=-10V, f=1MHz
=-15V, I
ISSUE 1 - JUNE 2002
B2
=-32V
=10mA
B
B
CE
CE
=-50mA*
=-200mA*
B
B
B
B
CE
CE
CE
=-10mA*
=-100mA*
=-250mA*
=-250mA*
C
=-2V*
=-2V*
CE
CE
=-0.75A
=-2V*
=-2V*
=-2V*
=-2V*
=-10V

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