ZXTDE4M832TA Diodes Zetex, ZXTDE4M832TA Datasheet - Page 6
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ZXTDE4M832TA
Manufacturer Part Number
ZXTDE4M832TA
Description
TRANS NPN 80V PNP 70V 8MLP
Manufacturer
Diodes Zetex
Datasheet
1.ZXTDE4M832TA.pdf
(8 pages)
Specifications of ZXTDE4M832TA
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
3.5A, 2.5A
Voltage - Collector Emitter Breakdown (max)
80V, 70V
Vce Saturation (max) @ Ib, Ic
325mV @ 300mA, 3.5A / 260mV @ 200mA, 1.5A
Current - Collector Cutoff (max)
25nA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 200mA, 2V / 40 @ 1.5A, 5V
Power - Max
1W
Frequency - Transition
160MHz, 180MHz
Mounting Type
Surface Mount
Package / Case
8-MLP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXTDE4M832TATR
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions.
ZXTDE4M832
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
= 25°C unless otherwise stated).
MIN.
-7.5
300
300
175
150
-70
-70
40
6
TYP.
-150
-125
-135
-140
-175
0.94
0.78
-8.5
470
450
275
180
700
-35
60
10
14
40
MAX.
-200
-220
-260
1.05
1.00
-25
-25
-25
-50
20
UNIT
MHz
mV
mV
mV
mV
nA
nA
nA
pF
ns
ns
V
V
V
V
V
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f=100MHz
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
EB
CE
CB
CC
=-100 A
=-100 A
=-10mA*
=-0.1A, I
=-0.5A, I
=-1.0A, I
=-1.5A, I
=-1.5A, I
=-1.5A, V
=-10mA, V
=-100mA, V
=-1A, V
=-1.5A, V
=-3A, V
=-50mA, V
=I
=-6V
=-55V
=-55V
=-10V, f=1MHz
=-50V, I
ISSUE 1 - JUNE 2002
B2
=-50mA
CE
CE
B
B
B
B
B
CE
CE
=-10mA*
=-20mA*
=-100mA*
=-200mA*
=-200mA*
=-5V*
=-5V*
C
CE
CE
=-1A
=-5V*
=-5V*
CE
=-5V*
=-10V
=-5V*