XN0460200L Panasonic - SSG, XN0460200L Datasheet - Page 2

• Manufacturer Part Number: XN0460200L
• Description: TRANS ARRAY NPN/PNP MINI-6
• Manufacturer: Panasonic - SSG

Specifications of XN0460200L

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 30mA, 300mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 85 @ 150mA, 10V
• Power - Max: 300mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: Mini 6P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: XN0460200LTR

XN04602
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
• Tr1
• Tr2
Collector output capacitance
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
(Common base, input open circuited)
Common characteristics chart
500
400
300
200
100
0
2. * : Pulse measurement
2. * : Pulse measurement
0
Ambient temperature T
40
Parameter
Parameter
P
T
 T
80
a
120
a
*
( °C )
*
160
*
*
a
= 25°C ± 3°C
Symbol
Symbol
V
V
V
V
V
V
V
V
V
I
I
h
h
h
h
CE(sat)
C
CE(sat)
BE(sat)
C
CBO
CBO
f
f
CBO
CEO
EBO
FE1
FE2
CBO
CEO
EBO
FE1
FE2
T
ob
T
ob
I
I
I
V
V
V
I
V
V
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
C
E
C
C
CB
CE
CE
CB
CB
CB
CE
CE
CB
CB
= 10 µA, I
= 10 mA, I
= 10 µA, I
= 300 mA, I
= −10 µA, I
= −10 mA, I
= −10 µA, I
= −300 mA, I
= −300 mA, I
SJJ00261BED
= 10 V, I
= 10 V, I
= 10 V, I
= −10 V, I
= −10 V, I
= 20 V, I
= 10 V, I
= −20 V, I
= −10 V, I
= −10 V, I
C
E
Conditions
Conditions
B
C
C
E
E
E
E
C
= 0
= 0
B
B
C
C
= −50 mA, f = 200 MHz
E
E
E
= 0
= 0
= 150 mA
= 500 mA
= 0, f = 1 MHz
= 0
= 0
B
B
= 30 mA
= 0
= 0
= 0, f = 1 MHz
= −150 mA
= −500 mA
= 50 mA, f = 200 MHz
= −30 mA
= −30 mA
Min
Min
−60
−50
−5
60
50
85
40
85
40
5
− 0.35 − 0.60
−1.1
Typ
0.35
200
Typ
200
6
6
− 0.1
Max
Max
−1.5
0.60
340
340
0.1
15
15
MHz
MHz
Unit
Unit
µA
µA
pF
pF


V
V
V
V
V
V
V
V
V