BC847BVN-7 Diodes Inc, BC847BVN-7 Datasheet

TRANSISTOR DUAL NPN/PNP SOT-563

BC847BVN-7

Manufacturer Part Number
BC847BVN-7
Description
TRANSISTOR DUAL NPN/PNP SOT-563
Manufacturer
Diodes Inc
Datasheet

Specifications of BC847BVN-7

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V / 220 @ 2mA, 5V
Power - Max
150mW
Frequency - Transition
300MHz, 200MHz
Mounting Type
Surface Mount
Package / Case
SOT-563
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V at NPN, 5 V at PNP
Maximum Dc Collector Current
0.1 A
Power Dissipation
150 mW
Maximum Operating Frequency
300 MHz at NPN, 200 MHz at PNP
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BC847BVNDITR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC847BVN-7
Manufacturer:
DIODES
Quantity:
3 000
Part Number:
BC847BVN-7-F
Manufacturer:
DIODES
Quantity:
36 000
Mechanical Data
Notes:
Features
Maximum Ratings
Maximum Ratings
Thermal Characteristics
DS30627 Rev. 4 - 2
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation (Note 1) @T
Thermal Resistance, Junction to Ambient (Note 1) @T
Operating and Storage Temperature Range
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking (See Page 3): KAW
Ordering & Date Code Information: See Page 4
Weight: 0.003 grams (approximate)
Epitaxial Die Construction
Two internally isolated NPN/PNP Transistors in one
package
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
Matte Tin Finish annealed over Copper
Characteristic
@ T
@ T
A
A
A
= 25
= 25°C unless otherwise specified
= 25°C unless otherwise specified
o
C
Total Device
A
= 25
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE
Lead-free Green
www.diodes.com
o
C
1 of 4
K
Q
Symbol
C
E
1
V
V
V
Symbol
1
1
KAW YM
I
I
C
E
CBO
CEO
EBO
I
CM
EM
V
V
V
C
1
1
I
I
NPN, BC847B Type (Q
PNP, BC857B Type (Q
CBO
CEO
EBO
I
CM
EM
C
Symbol
T
B
B
j
A
B
B
G
H
R
, T
2
1
2
1
P
d
JA
D
STG
C
E
E
C
2
Q
2
2
2
2
B C
M
L
Value
100
200
200
Value
6.0
-65 to +150
50
45
-100
-200
-200
-5.0
-50
-45
Value
150
833
BC847BVN
MOUNT TRANSISTOR
2
1
)
)
Dim
M
A
B
C
D
G
H
K
L
All Dimensions in mm
0.15
1.10
1.55
0.90
1.50
0.56
0.10
0.10
Min
SOT-563
Diodes Incorporated
Unit
Unit
mA
mA
mA
mA
mA
mA
°C/W
V
V
V
Unit
0.50
mW
V
V
V
Max
0.30
1.25
1.70
1.10
1.70
0.60
0.30
0.18
°C
BC847BVN
0.25
1.20
1.60
1.00
1.60
0.60
0.20
Typ

Related parts for BC847BVN-7

BC847BVN-7 Summary of contents

Page 1

... B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.56 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 All Dimensions Unit Unit V -50 V -45 -5.0 V -100 mA -200 mA -200 mA Value Unit 150 mW 833 °C/W °C BC847BVN Diodes Incorporated ...

Page 2

... 5.0V 2.0mA 700 =5.0V 10mA 720 30V 30V 150°C 5.0 µ 5.0V 10mA — MHz f = 100MHz V = 10V 1.0MHz 6 100° 25° -50°C A 1.0 10 100 I , COLLECTOR CURRENT (mA Collector Current (BC847B Type 1MHz Cibo Cobo REVERSE VOLTAGE (V) R (BC847B Type) BC847BVN ...

Page 3

... 5.0V -10mA -820 -30V - -30V 150°C -4.0 µ -5.0V -10mA — MHz f = 100MHz V = -10V 1.0MHz 4 25° 150° -50° -10 -100 -1000 I , COLLECTOR CURRENT (mA) C vs. Collector Current (BC857B Type 1MHz Cibo Cobo REVERSE VOLTAGE (V) R (BC857B Type) BC847BVN ...

Page 4

... T , AMBIENT TEMPERATURE (°C) A Fig. 9, Derating Curve - Total Device Ordering Information (Note 6) Device BC847BVN-7 Notes: 6. For Packaging Details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KAW YM Date Code Key Year 2004 2005 Code R S Month Jan Feb 1 2 Code Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...

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