Mechanical Data
Features
Maximum Ratings
Electrical Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
•
•
•
•
•
•
•
•
•
•
•
•
•
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Notes:
DS30304 Rev. 8 - 2
Epitaxial Planar Die Construction
Complementary PNP Type Available (IMT4)
Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
"Green" Device, Note 4 and 5
Case: SOT-26
Case Material: Molded Plastic, "Green" Molding
Compound, Note 5. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
Marking Information: KX8, See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.016 grams (approximate)
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
I
I
h
CBO
EBO
f
FE
T
www.diodes.com
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Min
120
120
180
5.0
⎯
⎯
⎯
⎯
K
J
C
1 of 3
B
2
2
B
C
2
2
Symbol
B
T
E
1
2
V
V
j
Typ
V
140
R
, T
⎯
⎯
⎯
⎯
⎯
⎯
⎯
A
B
E
H
P
CBO
CEO
EBO
I
1
2
θ JA
C
d
STG
D
E
C
E
C
1
1
1
1
F
Max
820
B C
0.5
0.5
0.5
⎯
⎯
⎯
⎯
L
MHz
Unit
μA
μA
⎯
V
V
V
V
-55 to +150
Value
120
120
300
417
5.0
50
I
I
I
V
V
I
I
V
f = 100MHz
M
C
C
E
C
C
CB
EB
CE
= 50μA
= 10mA, I
= 50μA
= 1.0mA
= 2.0mA, V
= 4.0V
= 100V
= 12V, I
Dim
Test Condition
B
C
M
All Dimens ons in mm
A
B
C
D
F
H
K
L
α
J
CE
= 1.0mA
= 2.0mA,
= 6.0V
0.013 0.10
0.35
1.50
2.70
2.90
1.00
0.35
0.10
Min
⎯
⎯
0°
SOT-26
© Diodes Incorporated
°C/W
i
Unit
mW
mA
°C
IMX8
Max
0.50
1.70
3.00
3.10
1.30
0.55
0.20
V
V
V
⎯
⎯
8°
0.38
1.60
2.80
0.95
0.55
3.00
0.05
1.10
0.40
0.15
Typ
⎯
IMX8