XP0450100L Panasonic - SSG, XP0450100L Datasheet
XP0450100L
Manufacturer Part Number
XP0450100L
Description
TRANS ARRAY NPN/NPN SMINI-6
Manufacturer
Panasonic - SSG
Specifications of XP0450100L
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
300mV @ 10mA, 100mA
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 2mA, 10V
Power - Max
150mW
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
XP0450100LTR
XP4501
XP4501(TX)
XP4501(TX)
XP4501
XP4501(TX)
XP4501(TX)
Composite Transistors
XP04501
Silicon NPN epitaxial planar type
For general amplification
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
• 2SD0601A (2SD601A) × 2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Parameter
Parameter
(XP4501)
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
I
I
stg
C
CE(sat)
C
T
h
CBO
j
CEO
f
= 25°C
CBO
CEO
EBO
FE
T
ob
−55 to +150
Rating
I
I
I
V
V
V
I
V
V
C
C
E
C
100
200
150
150
Note) The part number in the parenthesis shows conventional part number.
CB
CE
CE
CB
CB
60
50
= 10 µA, I
= 2 mA, I
= 10 µA, I
= 100 mA, I
7
SJJ00185BED
= 10 V, I
= 10 V, I
= 20 V, I
= 10 V, I
= 10 V, I
B
C
E
Conditions
Unit
mW
B
C
E
E
mA
mA
= 0
E
°C
°C
= 0
= 0
B
V
V
V
= 2 mA
= 0
= 0
= 0, f = 1 MHz
= −2 mA, f = 200 MHz
= 10 mA
Marking Symbol: 5H
Internal Connection
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-88
10˚
(0.65) (0.65)
1
0.2
6
1.3
2.0
±0.05
±0.1
±0.1
Min
160
5
60
50
Tr1
2
7
6
1
4
3
Typ
150
3.5
2
5
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SMini6-G1 Package
Tr2
4
3
Max
460
100
0.3
0.1
0.12
Unit: mm
+0.05
–0.02
MHz
Unit
µA
µA
pF
V
V
V
V
1
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