MMDT5451-7-F Diodes Inc, MMDT5451-7-F Datasheet

TRANS COMP PAIR 160V SOT363

MMDT5451-7-F

Manufacturer Part Number
MMDT5451-7-F
Description
TRANS COMP PAIR 160V SOT363
Manufacturer
Diodes Inc
Datasheet

Specifications of MMDT5451-7-F

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
160V, 150V
Vce Saturation (max) @ Ib, Ic
200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V / 60 @ 10mA, 5V
Power - Max
200mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
160 V at NPN, 150 V at PNP
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
0.2 W
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
60
Minimum Operating Temperature
- 55 C
Collector Emitter Voltage V(br)ceo
160V
Power Dissipation Pd
200mW
Dc Collector Current
200mA
Dc Current Gain Hfe
80
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMDT5451-FDITR

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Mechanical Data
Features
Maximum Ratings, NPN 5551 Section
Maximum Ratings, PNP 5401 Section
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
DS30171 Rev. 9 - 2
Complementary Pair
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: KNM, See Page 5
Ordering & Date Code Information: See Page 5
Weight: 0.006 grams (approximate)
1.
2.
3.
4.
5.
Maximum combined dissipation.
No purposefully added lead.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Characteristic
Characteristic
One 5551-Type NPN
One 5401-Type PNP
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
(Note 1, 2)
(Note 1, 2)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
@T
@T
www.diodes.com
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
E1, B1, C1 = PNP5401 Section
E2, B2, C2 = NPN5551 Section
K
J
1 of 5
C
E
2
2
Symbol
Symbol
T
T
V
V
j
V
V
j
V
V
R
R
, T
, T
G
A
B
B
H
P
P
CBO
CEO
EBO
CBO
CEO
EBO
I
I
1
2
θ JA
θ JA
C
C
d
d
STG
STG
D
E
C
1
1
F
B C
L
-55 to +150
-55 to +150
NPN5551
PNP5401
-160
-150
-200
180
160
200
200
625
-5.0
200
625
6.0
M
MMDT5451
All Dimens
Dim
M
A
B
C
D
H
K
F
J
L
α
SOT-363
0.10
1.15
2.00
0.30
1.80
0.90
0.25
0.10
Min
0.65 Nominal
ions in
© Diodes Incorporated
°C/W
Unit
Unit
K/W
mW
mW
mA
mA
°C
°C
V
V
V
V
V
V
MMDT5451
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
mm

Related parts for MMDT5451-7-F

MMDT5451-7-F Summary of contents

Page 1

... L 0.25 0.40 M 0.10 0.25 α 0° 8° All Dimens ions in mm NPN5551 Unit 180 V 160 V 6.0 V 200 mA 200 mW 625 °C/W °C -55 to +150 PNP5401 Unit -160 V -150 V -5.0 V -200 mA 200 mW 625 K/W °C -55 to +150 MMDT5451 © Diodes Incorporated ...

Page 2

... C = 1.0kΩ 1.0kHz S Test Condition = -100μ -1.0mA -10μ -120V -120V 100° -3.0V -1.0mA -5. -10mA -5. -50mA -5. -10mA -1.0mA B = -50mA -5.0mA B = -10mA -1.0mA B = -50mA -5.0mA B = -10V 1.0MHz -10V -1.0mA -10V -10mA -5.0V -200μ 10Ω 1.0kHz S MMDT5451 © Diodes Incorporated ...

Page 3

... I , COLLECTOR CURRENT (mA) C Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current (NPN5551 -50° 25° 150° 100 I , COLLECTOR CURRENT (mA) C Fig. 4, Base Emitter Voltage vs. Collector Current (NPN5551 150° -50° 25° 100 1,000 I , COLLECTOR CURRENT (mA) C vs. Collector Current (PNP5401) MMDT5451 © Diodes Incorporated ...

Page 4

... Fig. 9, Gain Bandwidth Product vs. Collector Current (PNP5401) DS30171 Rev 1.0 V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1 100 1,000 100 www.diodes.com = -50° 25° 150° COLLECTOR CURRENT (mA) C Fig. 8, Base Emitter Voltage vs. Collector Current (PNP5401) © Diodes Incorporated 100 MMDT5451 ...

Page 5

... Ordering Information (Note 7) Device MMDT5451-7-F Notes: 7. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 1998 1999 2000 Code Jan Feb Mar Month 1 2 Code Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...

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