MCR708AT4 ON Semiconductor, MCR708AT4 Datasheet

MCR708AT4

Manufacturer Part Number

MCR708AT4

Description

THYRISTOR SCR 4A 600V DPAK

Manufacturer

ON Semiconductor

Datasheet

1.MCR708AT4G.pdf (6 pages)

Specifications of MCR708AT4

Scr Type

Sensitive Gate

Voltage - Off State

600V

Voltage - Gate Trigger (vgt) (max)

800mV

Voltage - On State (vtm) (max)

2.2V

Current - On State (it (av)) (max)

1.6A

Current - On State (it (rms)) (max)

Current - Gate Trigger (igt) (max)

75µA

Current - Hold (ih) (max)

5mA

Current - Off State (max)

10µA

Current - Non Rep. Surge 50, 60hz (itsm)

25A @ 60Hz

Operating Temperature

-40°C ~ 110°C

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Current - On State (it (rms) (max)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

MCR708AT4OSCT

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCR708AT4G

Manufacturer:

Quantity:

12 500

Current page: 1 of 6
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MCR703A Series

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

applications such as temperature, light and speed control; process and

remote control; and warning systems where reliability of operation is

critical.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. V

MAXIMUM RATINGS

March, 2009 − Rev. 11

Peak Repetitive Off−State Voltage (Note 1)

Peak Non-Repetitive Off−State Voltage

(Sine Wave, 50 to 60 Hz, R

On−State RMS Current

(180° Conduction Angles; T

Average On−State Current (180° Conduction

Angles)

Non-Repetitive Surge Current

Circuit Fusing (t = 8.3 msec)

Forward Peak Gate Power

Forward Average Gate Power

Forward Peak Gate Current

Operating Junction Temperature Range

Storage Temperature Range

PNPN devices designed for high volume, low cost consumer

Add ’1’ Suffix to Device Number, i.e., MCR706A1

Small Size

Passivated Die Surface for Reliability and Uniformity

Low Level Triggering and Holding Characteristics

Recommend Electrical Replacement for C106

Surface Mount Package − Case 369C

To Obtain “DPAK” in Straight Lead Version (Shipped in Sleeves):

Epoxy Meets UL 94 V−0 @ 0.125 in

ESD Ratings:

Pb−Free Packages are Available

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

source such that the voltage ratings of the devices are exceeded.

= −40 to +110°C)

(1/2 Sine Wave, 60 Hz, T

(1/2 Sine Wave, 1.5 ms, T

(Pulse Width ≤ 1.0 msec, T

(t = 8.3 msec, T

(Pulse Width ≤ 1.0 msec, T

DRM

= −40 to +110°C, Sine Wave, 50 to 60 Hz,

= 1 kW)

and V

RRM

Rating

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

= −40 to +90°C

= +100°C

= 90°C)

Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

= 25°C unless otherwise noted)

Preferred Device

= 90°C)

= 1 kW,

= 110°C)

= 90°C)

MCR703A

MCR706A

MCR708A

MCR703A

MCR706A

MCR708A

Symbol

T(RMS)

T(AV)

G(AV)

DRM,

TSM

RRM

RSM

stg

−40 to +110

−40 to +150

Max

100

400

600

150

450

650

4.0

2.6

1.6

2.6

0.5

0.1

0.2

Unit

°C

sec

1 2

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

ORDERING INFORMATION

4.0 AMPERES RMS

100 − 600 VOLTS

70xA = Device Code

http://onsemi.com

PIN ASSIGNMENT

CASE 369C

CASE 369D

STYLE 5

DPAK−3

= Year

= Work Week

= Pb−Free Package

DPAK

x = 3, 6 or 8

SCRs

Publication Order Number:

Cathode

Anode

Gate

DIAGRAMS

MARKING

MCR703A/D

70xAG

YWW

Related parts for MCR708AT4

MCR708AT4 Summary of contents

Page 1

MCR703A Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation ...

Page 2

... ORDERING INFORMATION Device MCR703AT4 MCR703AT4G MCR706AT4 MCR706AT4G MCR708A MCR708AG MCR708A1 MCR708A1G MCR708AT4 MCR708AT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted 25° 110°C ...

Page 3

Voltage Current Characteristic of SCR Symbol Parameter V Peak Repetitive Off−State Forward Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Off−State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak On−State Voltage TM I Holding ...

Page 4

T , JUNCTION TEMPERATURE (°C) J Figure 5. Typical Gate Trigger Current versus Junction Temperature 2.0 1.5 1.0 0.5 0 -40 - JUNCTION ...

Page 5

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE A SEATING −T− PLANE SOLDERING FOOTPRINT* 6.20 3.0 0.244 0.118 2 ...

Page 6

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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