MCR69-3G ON Semiconductor, MCR69-3G Datasheet - Page 2
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MCR69-3G
Manufacturer Part Number
MCR69-3G
Description
THYRISTOR SCR 25A 100V TO220AB
Manufacturer
ON Semiconductor
Datasheet
1.MCR69-2G.pdf
(6 pages)
Specifications of MCR69-3G
Scr Type
Standard Recovery
Voltage - Off State
100V
Voltage - Gate Trigger (vgt) (max)
1.5V
Voltage - On State (vtm) (max)
1.8V
Current - On State (it (av)) (max)
16A
Current - On State (it (rms)) (max)
25A
Current - Gate Trigger (igt) (max)
30mA
Current - Hold (ih) (max)
50mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
300A @ 60Hz
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current - On State (it (rms) (max)
25A
Breakover Current Ibo Max
300 A
Rated Repetitive Off-state Voltage Vdrm
100 V
Off-state Leakage Current @ Vdrm Idrm
0.01 mA
Forward Voltage Drop
1.8 V
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
30 mA
Holding Current (ih Max)
50 mA
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MCR69-003G
MCR69-3GOS
MCR69-3GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCR69-3G
Manufacturer:
ON
Quantity:
18 000
4. Pulse duration p 300 ms, duty cycle p 2%.
5. Ratings apply for t
6. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
Peak Repetitive Forward or Reverse Blocking Current
Peak Forward On-State Voltage
Gate Trigger Current (Continuous dc)
Gate Trigger Voltage (Continuous dc)
Gate Non−Trigger Voltage
Holding Current
Latching Current
Gate Controlled Turn-On Time (Note 6)
Critical Rate-of-Rise of Off-State Voltage
Critical Rate-of-Rise of On-State Current
as 5 time constants of an exponentially decaying current pulse.
(V
(I
(I
(V
(V
(V
(V
(V
(V
(I
(V
I
G
TM
TM
TM
AK
D
D
D
D
D
D
D
= 150 mA
= 12 V, R
= 12 V, R
= 12 Vdc, R
= 12 V, Initiating Current = 200 mA, Gate Open)
= 12 Vdc, I
= Rated V
= Rated V
= 50 A) (Note 4)
= 750 A, t
= 50 A Peak)
= Rated V
L
L
DRM
DRM
w
= 100 W)
= 100 W)
G
DRM
L
= 1 ms) (Note 5)
w
= 150 mA)
= 100 W, T
, I
, Gate Open, Exponential Waveform, T
= 1 ms. See Figure 1 for I
or V
G
= 150 mA)
RRM
J
, Gate Open)
= 125 C)
Characteristic
Characteristic
(T
C
= 25 C unless otherwise noted.)
TM
capability for various durations of an exponentially decaying current waveform. t
MCR69−2, MCR69−3
http://onsemi.com
J
T
T
T
= 125 C)
J
J
J
= 25 C
= 125 C
= 125 C
2
I
DRM
Symbol
Symbol
R
R
dv/dt
V
V
V
di/dt
I
T
t
qJC
qJA
GT
I
I
, I
TM
GT
GD
H
gt
L
L
RRM
Min
2.0
0.2
3.0
10
−
−
−
−
−
−
−
−
Max
0.65
0.40
260
Typ
1.5
6.0
7.0
1.0
60
15
−
−
−
−
−
−
Max
100
2.0
1.8
1.5
10
30
50
60
−
−
−
−
w
is defined
Unit
Unit
V/ms
A/ms
C/W
C/W
mA
mA
mA
mA
mA
ms
V
V
V
C