2N6509G ON Semiconductor, 2N6509G Datasheet - Page 5

• Manufacturer Part Number: 2N6509G
• Description: THYRISTOR SCR 25A 800V TO220AB
• Manufacturer: ON Semiconductor
• Type: SCRr

Specifications of 2N6509G

• Scr Type: Standard Recovery
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.8V
• Current - On State (it (av)) (max): 16A
• Current - On State (it (rms)) (max): 25A
• Current - Gate Trigger (igt) (max): 30mA
• Current - Hold (ih) (max): 40mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 250A @ 60Hz
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current - On State (it (rms) (max): 25A
• Current, Forward: 25 A
• Current, Surge: 250 A
• Package Type: TO-220AB
• Primary Type: SCR
• Resistance, Thermal, Junction To Case: 1.5 °C/W
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -40 to +125 °C
• Voltage, Forward: 1.8 V
• Voltage, Reverse: 800 V
• Repetitive Peak Off-state Volt: 800V
• Off-state Voltage: 800V
• Average On-state Current: 16A
• Hold Current: 40mA
• Gate Trigger Current (max): 30mA
• Gate Trigger Voltage (max): 1.5V
• Peak Repeat Off Current: 10uA
• Peak Surge On-state Current (max): 250A
• On State Voltage(max): 1.8@50AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Breakover Current Ibo Max: 250 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.8 V
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 30 mA
• Holding Current (ih Max): 40 mA
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N6509GOS

H
Q
Z
L
V
G
1 2 3
B
N
4
D
A
K
F
T
U
PACKAGE DIMENSIONS
2N6504 Series
CASE 221A-07
TO-220AB
ISSUE AA
C
-T-
7
J
R
S
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
Y14.5M, 1982.
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 3:
DIM
A
B
C
D
F
G
H
K
L
N
Q
R
S
T
U
V
Z
J
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
MIN
---
INCHES
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.060
0.210
0.120
0.055
0.255
0.050
0.080
0.110
MAX
---
14.48
12.70
MILLIMETERS
MIN
9.66
4.07
0.64
3.61
2.42
2.80
0.36
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
15.75
10.28
14.27
MAX
4.82
0.88
3.73
2.66
3.93
0.55
1.52
5.33
3.04
2.79
1.39
6.47
1.27
2.04
---