C122F1G ON Semiconductor, C122F1G Datasheet

THYRISTOR SCR 8A 50V TO-220AB

C122F1G

Manufacturer Part Number
C122F1G
Description
THYRISTOR SCR 8A 50V TO-220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of C122F1G

Scr Type
Standard Recovery
Voltage - Off State
50V
Voltage - Gate Trigger (vgt) (max)
1.5V
Voltage - On State (vtm) (max)
1.83V
Current - On State (it (rms)) (max)
8A
Current - Gate Trigger (igt) (max)
25mA
Current - Hold (ih) (max)
30mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
90A @ 60Hz
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current - On State (it (rms) (max)
8A
Breakover Current Ibo Max
90 A
Rated Repetitive Off-state Voltage Vdrm
50 V
Off-state Leakage Current @ Vdrm Idrm
0.01 mA
Forward Voltage Drop
1.83 V
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
25 mA
Holding Current (ih Max)
30 mA
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - On State (it (av)) (max)
-
Lead Free Status / Rohs Status
 Details
Other names
C122F1G
C122F1GOS
C122F1, C122B1
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
motor controls, heating controls and power supplies; or wherever
half−wave silicon gate−controlled, solid−state devices are needed.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 3
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Off−State Voltage
On-State RMS Current
Peak Non-Repetitive Surge Current
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
Designed primarily for full-wave ac control applications, such as
Parameter Uniformity and Stability
Resistance, High Heat Dissipation and Durability
Glass Passivated Junctions and Center Gate Fire for Greater
Small, Rugged, Thermowatt Construction for Low Thermal
Blocking Voltage to 200 Volts
Pb−Free Packages are Available*
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(Note 1) (T
50 to 60 Hz; Gate Open)
(180° Conduction Angles; T
(1/2 Cycle, Sine Wave, 60 Hz,
T
(Pulse Width = 10 ms, T
(t = 8.3 ms, T
(Pulse Width = 10 ms, T
DRM
C
= 75°C)
and V
J
RRM
= 25 to 100°C, Sine Wave,
C
Rating
= 70°C)
for all types can be applied on a continuous basis. Ratings
(T
J
C
C
= 25°C unless otherwise noted)
= 70°C)
= 70°C)
C122F1
C122B1
C
= 75°C)
Symbol
I
P
V
V
T(RMS)
I
P
I
T
TSM
G(AV)
DRM,
RRM
I
GM
T
GM
stg
2
J
t
−40 to +125
−40 to +150
Value
200
8.0
5.0
0.5
2.0
50
90
34
1
Unit
A
°C
°C
W
W
V
A
A
A
2
s
C122F1
C122F1G
C122B1
C122B1G
1
Device
2
3
1
2
3
4
ORDERING INFORMATION
A
Y
W
C122F1
G
AKA
50 thru 200 VOLTS
8 AMPERES RMS
A
http://onsemi.com
PIN ASSIGNMENT
4
(Pb−Free)
(Pb−Free)
TO220AB
TO220AB
TO220AB
TO220AB
Package
CASE 221A
TO−220AB
STYLE 3
SCRs
Publication Order Number:
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
Cathode
Anode
Anode
Gate
G
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
MARKING
DIAGRAM
K
C122F1G
Shipping
A
C122F1/D
AKA
YW

Related parts for C122F1G

C122F1G Summary of contents

Page 1

... T −40 to +150 stg C122F1 C122F1G C122B1 C122B1G 1 http://onsemi.com SCRs 8 AMPERES RMS 50 thru 200 VOLTS MARKING DIAGRAM 4 A TO−220AB C122F1G CASE 221A AKA STYLE Assembly Location Y = Year W = Work Week C122F1 = Device Code G = Pb−Free Package AKA = Diode Polarity PIN ASSIGNMENT 1 Cathode ...

Page 2

THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (V = Rated ...

Page 3

Voltage Current Characteristic of SCR Symbol Parameter V Peak Repetitive Off State Forward Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Off State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak On State Voltage ...

Page 4

... DIMENSION Z DEFINES A ZONE WHERE ALL American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 Y14.5M, 1982. BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES ...

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