C122F1, C122B1
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
motor controls, heating controls and power supplies; or wherever
half−wave silicon gate−controlled, solid−state devices are needed.
Features
•
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 3
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Off−State Voltage
On-State RMS Current
Peak Non-Repetitive Surge Current
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
Designed primarily for full-wave ac control applications, such as
Parameter Uniformity and Stability
Resistance, High Heat Dissipation and Durability
Glass Passivated Junctions and Center Gate Fire for Greater
Small, Rugged, Thermowatt Construction for Low Thermal
Blocking Voltage to 200 Volts
Pb−Free Packages are Available*
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(Note 1) (T
50 to 60 Hz; Gate Open)
(180° Conduction Angles; T
(1/2 Cycle, Sine Wave, 60 Hz,
T
(Pulse Width = 10 ms, T
(t = 8.3 ms, T
(Pulse Width = 10 ms, T
DRM
C
= 75°C)
and V
J
RRM
= 25 to 100°C, Sine Wave,
C
Rating
= 70°C)
for all types can be applied on a continuous basis. Ratings
(T
J
C
C
= 25°C unless otherwise noted)
= 70°C)
= 70°C)
C122F1
C122B1
C
= 75°C)
Symbol
I
P
V
V
T(RMS)
I
P
I
T
TSM
G(AV)
DRM,
RRM
I
GM
T
GM
stg
2
J
t
−40 to +125
−40 to +150
Value
200
8.0
5.0
0.5
2.0
50
90
34
1
Unit
A
°C
°C
W
W
V
A
A
A
2
s
C122F1
C122F1G
C122B1
C122B1G
1
Device
2
3
1
2
3
4
ORDERING INFORMATION
A
Y
W
C122F1
G
AKA
50 thru 200 VOLTS
8 AMPERES RMS
A
http://onsemi.com
PIN ASSIGNMENT
4
(Pb−Free)
(Pb−Free)
TO220AB
TO220AB
TO220AB
TO220AB
Package
CASE 221A
TO−220AB
STYLE 3
SCRs
Publication Order Number:
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
Cathode
Anode
Anode
Gate
G
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
MARKING
DIAGRAM
K
C122F1G
Shipping
A
C122F1/D
AKA
YW