MCR8SMG ON Semiconductor, MCR8SMG Datasheet

MCR8SMG

Manufacturer Part Number

MCR8SMG

Description

THYRISTOR SCR 8A 600V TO220AB

Manufacturer

ON Semiconductor

Datasheet

1.MCR8SDG.pdf (5 pages)

Specifications of MCR8SMG

Scr Type

Sensitive Gate

Voltage - Off State

600V

Voltage - Gate Trigger (vgt) (max)

Voltage - On State (vtm) (max)

1.8V

Current - On State (it (rms)) (max)

Current - Gate Trigger (igt) (max)

200µA

Current - Hold (ih) (max)

6mA

Current - Off State (max)

10µA

Current - Non Rep. Surge 50, 60hz (itsm)

80A @ 60Hz

Operating Temperature

-40°C ~ 110°C

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Current - On State (it (rms) (max)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - On State (it (av)) (max)

Other names

MCR8SMGOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCR8SMG

Manufacturer:

ON Semiconductor

Quantity:

500

Current page: 1 of 5
Download datasheet (133Kb)

MCR8SD, MCR8SM, MCR8SN

Sensitive Gate Silicon

Controlled Rectifiers

Reverse Blocking Thyristors

motor controls, heating controls, and power supplies; or wherever

half−wave, silicon gate−controlled devices are needed.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. V

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

November, 2008 − Rev. 4

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Peak Repetitive Off−State Voltage (Note 1)

50 to 60 Hz)

On-State RMS Current

(180° Conduction Angles; T

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave, 60 Hz, T

Circuit Fusing Consideration (t = 8.33 ms)

Forward Peak Gate Power

(Pulse Width ≤ 10 ms, T

Forward Average Gate Power

(t = 8.3 ms, T

Forward Peak Gate Current

(Pulse Width ≤ 10 ms, T

Operating Junction Temperature Range

Storage Temperature Range

Designed primarily for half-wave ac control applications, such as

Logic Circuits

Ease of Design

Sensitive Gate Allows Triggering by Microcontrollers and other

Blocking Voltage to 800 V

On−State Current Rating of 8 A RMS at 80°C

High Surge Current Capability − 80 A

Rugged, Economical TO−220AB Package

Glass Passivated Junctions for Reliability and Uniformity

Minimum and Maximum Values of IGT, VGT and IH Specified for

Immunity to dv/dt − 5 V/msec Minimum at 110°C

Pb−Free Packages are Available*

apply for zero or negative gate voltage; positive gate voltage shall not be

applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage ratings

of the devices are exceeded.

DRM

= −40 to 110°C, Sine Wave,

and V

RRM

= 80°C)

Rating

for all types can be applied on a continuous basis. Ratings

= 80°C)

= 25°C unless otherwise noted)

Preferred Device

= 80°C)

= 110°C)

MCR8SM

MCR8SD

MCR8SN

Symbol

T(RMS)

TSM

G(AV)

DRM,

RRM

stg

−40 to 110

−40 to 150

Value

26.5

400

600

800

8.0

5.0

0.5

2.0

Unit

°C

sec

MCR8SD

MCR8SDG

MCR8SM

MCR8SMG

MCR8SN

MCR8SNG

Preferred devices are recommended choices for future use

and best overall value.

Device

AKA

ORDERING INFORMATION

400 thru 800 VOLTS

8 AMPERES RMS

http://onsemi.com

PIN ASSIGNMENT

CASE 221A−09

TO−220AB

= Assembly Location

= Year

= Work Week

= D, M, or N

= Pb−Free Package

= Diode Polarity

STYLE 3

TO−220AB

(Pb−Free)

Package

SCRs

Publication Order Number:

Cathode

Anode

Gate

50 Units / Rail

MARKING

DIAGRAM

MCR8SxG

AY WW

Shipping

AKA

MCR8S/D

Related parts for MCR8SMG

MCR8SMG Summary of contents

Page 1

... W G(AV −40 to 110 ° −40 to 150 °C stg MCR8SD MCR8SDG MCR8SM MCR8SMG MCR8SN MCR8SNG Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com SCRs 8 AMPERES RMS 400 thru 800 VOLTS MARKING DIAGRAM AY WW MCR8SxG AKA TO− ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note Rated V and V ; ...

Page 3

Voltage Current Characteristic of SCR Symbol Parameter V Peak Repetitive Off State Forward Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Off State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak On State Voltage ...

Page 4

T , JUNCTION TEMPERATURE (°C) J Figure 5. Typical Holding Current versus Junction Temperature 1000 100 10 1 −40 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 65 ...

Page 5

... Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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