MCR310-10G ON Semiconductor, MCR310-10G Datasheet

MCR310-10G

Manufacturer Part Number

MCR310-10G

Description

THYRISTOR SCR 10A 800V TO220AB

Manufacturer

ON Semiconductor

Datasheet

1.MCR310-10G.pdf (3 pages)

Specifications of MCR310-10G

Scr Type

Sensitive Gate

Voltage - Off State

800V

Voltage - Gate Trigger (vgt) (max)

1.5V

Voltage - On State (vtm) (max)

2.2V

Current - On State (it (rms)) (max)

10A

Current - Gate Trigger (igt) (max)

200µA

Current - Hold (ih) (max)

6mA

Current - Off State (max)

500µA

Current - Non Rep. Surge 50, 60hz (itsm)

100A @ 60Hz

Operating Temperature

-40°C ~ 110°C

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Current - On State (it (rms) (max)

10A

Breakover Current Ibo Max

100 A

Rated Repetitive Off-state Voltage Vdrm

800 V

Off-state Leakage Current @ Vdrm Idrm

0.01 mA

Forward Voltage Drop

2.2 V

Gate Trigger Voltage (vgt)

1.5 V

Gate Trigger Current (igt)

0.2 mA

Holding Current (ih Max)

6 mA

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - On State (it (av)) (max)

Lead Free Status / Rohs Status

Details

Other names

MCR310-10GOS

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MCR310 Series

Silicon Controlled Rectifiers

Reverse Blocking Triode Thyristors

temperature, light and speed control; process and remote controls;

warning systems; capacitive discharge circuits and MPU interface.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

(1) V

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

March, 2007 − Rev. 3

Peak Repetitive Forward and Reverse

On-State RMS Current (T

Peak Non-repetitive Surge Current

Circuit Fusing (t = 8.3 ms)

Peak Gate Voltage (t p 10 ms)

Peak Gate Current (t p 10 ms)

Peak Gate Power (t p 10 ms)

Average Gate Power

Operating Junction Temperature Range

Storage Temperature Range

Mounting Torque

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Designed for industrial and consumer applications such as

and Stability

Resistance, High Heat Dissipation and Durability

Integrated Circuits

Center Gate Geometry for Uniform Current Density

All Diffused and Glass-Passivated Junctions for Parameter Uniformity

Small, Rugged, Thermowatt Construction for Low Thermal

Low Trigger Currents, 200 mA Maximum for Direct Driving from

Pb−Free Packages are Available

Semiconductor Components Industries, LLC, 2007

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Blocking Voltage

(1/2 Cycle, 60 Hz, T

DRM

(1/2 Sine Wave, R

and V

= −40 to 110 C)

Characteristic

RRM

Rating

for all types can be applied on a continuous basis. Ratings

(1)

= −40 to 110 C)

= 1 k )

= 25 C unless otherwise noted.)

= 75 C)

Preferred Device

MCR310-10

MCR310-6

MCR310-8

Symbol

T(RMS)

TSM

G(AV)

DRM

RRM

stg

−

−40 to +150

−40 to +110

Value

0.75

Max

400

600

800

100

2.2

Amps

Watts

in.-lb.

Volts

Amp

Watt

Unit

C/W

Preferred devices are recommended choices for future use

and best overall value.

MCR310−6

MCR310−6G

MCR310−8

MCR310−8G

MCR310−10

MCR310−10G

Device

CASE 221A

TO−220AB

STYLE 3

= 6, 8 or 10

= Assembly Location

= Year

= Work Week

= Pb−Free Package

ORDERING INFORMATION

400 thru 800 VOLTS

10 AMPERES RMS

http://onsemi.com

TO220AB

(Pb−Free)

TO220AB

(Pb−Free)

TO220AB

(Pb−Free)

Package

SCRs

Publication Order Number:

MCR310−xG

MARKING

DIAGRAM

AYWW

Shipping

500/Box

MCR310/D

Related parts for MCR310-10G

MCR310-10G Summary of contents

Page 1

... MCR310 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. Center Gate Geometry for Uniform Current Density ...

Page 2

... CONDUCTION ANGLE 100 = 180 AVERAGE ON-STATE CURRENT (AMPS) T(AV) Figure 1. Average Current Derating 0.5 0.3 −40 − JUNCTION TEMPERATURE ( C) J Figure 3. Normalized Gate Current MCR310 Series ( unless otherwise noted Symbol T = 110 DRM 110 RRM dv/ Devices shall not have a positive gate voltage concurrently with a negative voltage ...

Page 3

... Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MCR310 Series PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE AA ...

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