2N6402G ON Semiconductor, 2N6402G Datasheet - Page 2

• Manufacturer Part Number: 2N6402G
• Description: THYRISTOR SCR 16A 200V TO-220AB
• Manufacturer: ON Semiconductor

Specifications of 2N6402G

• Scr Type: Standard Recovery
• Voltage - Off State: 200V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 10A
• Current - On State (it (rms)) (max): 16A
• Current - Gate Trigger (igt) (max): 30mA
• Current - Hold (ih) (max): 40mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 160A @ 60Hz
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current - On State (it (rms) (max): 16A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
*Indicates JEDEC Registered Data.
MAXIMUM RATINGS*
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Peak Repetitive Off-State Voltage (Note 1)
On‐State Current RMS (180 Conduction Angles; T
Average On‐State Current (180 Conduction Angles; T
Peak Non‐repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, T
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power (Pulse Width
Forward Average Gate Power (t = 8.3 ms, T
Forward Peak Gate Current (Pulse Width
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction-to-Case
Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
* Peak Repetitive Forward or Reverse Blocking Current
*Peak Forward On-State Voltage (I
* Gate Trigger Current (Continuous dc)
* Gate Trigger Voltage (Continuous dc)
Gate Non-Trigger Voltage (V
* Holding Current
Turn‐On Time (I
Critical Rate-of-Rise of Off‐State Voltage (V
Turn‐Off Time (I
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
(T
(V
(V
(V
(V
T
DRM
J
J
AK
D
D
D
= +125 C
= *40 to 125 C, Sine Wave 50 to 60 Hz; Gate Open)
= 12 Vdc, R
= 12 Vdc, R
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
and V
= Rated V
RRM
TM
TM
DRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
L
L
= 16 A, I
= 16 A, I
= 100 W)
= 100 W)
or V
(T
J
RRM
D
GT
= 25 C unless otherwise noted)
R
= 12 Vdc, R
= 16 A, V
, Gate Open)
= 40 mAdc, V
TM
Characteristic
Characteristic
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
= 32 A Peak, Pulse Width
Rating
D
(T
L
= Rated V
C
1.0 ms, T
= 100 W), T
1.0 ms, T
C
= 25 C unless otherwise noted.)
D
D
= 100 C)
= Rated V
= Rated V
C
C
DRM
C
= 100 C)
C
= 100 C)
T
T
T
T
T
T
T
*T
T
T
C
= 100 C)
J
J
C
C
C
C
C
C
J
= 100 C)
C
)
= +125 C
= 25 C
= 125 C
= +125 C
= 25 C
= -40 C
= 25 C
= -40 C
= 25 C
= 25 C
DRM
http://onsemi.com
DRM
2N6400 Series
= -40 C
, Exponential Waveform)
)
1 ms, Duty Cycle
J
2
= 90 C)
2%)
Symbol
Symbol
R
I
T
I
dv/dt
Symbol
qJC
DRM
V
V
V
I
RRM
I
V
P
V
T(RMS)
L
t
I
GT
I
t
I
TM
GT
GD
P
H
gt
T(AV)
q
I
T
DRM,
TSM
G(AV)
RRM
I
GM
T
GM
stg
2
J
,
t
Min
0.2
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
260
1.5
-40 to +125
-40 to +150
Value
100
200
400
600
800
160
145
Typ
0.5
2.0
9.0
0.7
1.0
50
16
10
20
18
15
35
50
-
-
-
-
-
-
-
Max
2.0
1.7
1.5
2.5
10
30
60
40
60
-
-
-
-
-
Unit
C/W
C
Unit
A
W
W
V
A
A
A
A
V/ms
2
C
C
Unit
mA
mA
mA
mA
s
ms
ms
V
V
V