MCR8DCNT4G ON Semiconductor, MCR8DCNT4G Datasheet - Page 2

• Manufacturer Part Number: MCR8DCNT4G
• Description: THYRISTOR SCR 8A 800V DPAK-4
• Manufacturer: ON Semiconductor

Specifications of MCR8DCNT4G

• Scr Type: Standard Recovery
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 1V
• Voltage - On State (vtm) (max): 1.8V
• Current - On State (it (av)) (max): 5.1A
• Current - On State (it (rms)) (max): 8A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 30mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 80A @ 60Hz
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current - On State (it (rms) (max): 8A
• Breakover Current Ibo Max: 80 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.8 V
• Gate Trigger Voltage (vgt): 1 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 30 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCR8DCNT4G; MCR8DCNT4GOSTR

2. Surface mounted on minimum recommended pad size.
3. 1/8″ from case for 10 seconds.
4. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MCR8DCMT4
MCR8DCMT4G
MCR8DCNT4
MCR8DCNT4G
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes (Note 3)
Peak Repetitive Forward or Peak Repetitive Reverse Blocking Current
Peak On−State Voltage (Note 4) (I
Gate Trigger Current (Continuous dc)
Gate Trigger Voltage (Continuous dc)
Holding Current
Latching Current
Critical Rate of Rise of Off−State Voltage
(V
(V
(T
(V
(T
(T
(V
(V
(V
(V
AK
AK
J
AK
J
J
AK
AK
AK
AK
= −40°C)
= −40°C)
= 125°C)
= Rated V
= 12 V, R
= 12 V, R
= 12 V, Initiating Current = 200 mA, Gate Open)
= 12 V, I
= 12 V, I
= Rated V
G
G
L
L
DRM
DRM
= 15 mA, T
= 30 mA, T
= 100 W, T
= 100 W, T
Device
, Exponential Waveform, Gate Open, T
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note
or V
RRM
J
J
J
J
= 25°C)
= 25°C)
= 25°C)
= −40°C)
, Gate Open)
Characteristics
Characteristic
TM
= 16 A)
(T
J
= 25°C unless otherwise noted)
MCR8DCM, MCR8DCN
2)m
http://onsemi.com
T
T
T
T
J
J
J
J
J
= 25°C
= 125°C
= 25°C
= −40°C
= 125°C)
(Pb−Free)
(Pb−Free)
Package
DPAK
DPAK
DPAK
DPAK
2
Symbol
Symbol
I
R
I
dv/dt
R
R
DRM
V
V
RRM
I
T
GT
I
qJC
qJA
qJA
I
TM
GT
H
L
L
,
2500 / Tape & Reel
Min
2.0
0.5
0.2
4.0
4.0
50
−
−
−
−
−
−
−
Shipping
Max
0.65
Typ
260
200
2.2
1.4
7.0
88
80
22
22
−
−
−
−
−
−
−
†
Max
0.01
5.0
1.8
1.0
2.0
15
30
30
60
30
60
−
−
°C/W
V/ms
Unit
Unit
mA
mA
mA
mA
°C
V
V