MCR703AT4G ON Semiconductor, MCR703AT4G Datasheet - Page 2

THYRISTOR SCR 4A 100V DPAK

MCR703AT4G

Manufacturer Part Number
MCR703AT4G
Description
THYRISTOR SCR 4A 100V DPAK
Manufacturer
ON Semiconductor
Type
SCRr
Datasheet

Specifications of MCR703AT4G

Scr Type
Sensitive Gate
Voltage - Off State
100V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
2.2V
Current - On State (it (av)) (max)
1.6A
Current - On State (it (rms)) (max)
4A
Current - Gate Trigger (igt) (max)
75µA
Current - Hold (ih) (max)
5mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
25A @ 60Hz
Operating Temperature
-40°C ~ 110°C
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Current - On State (it (rms) (max)
4A
Peak Repetitive Off-state Voltage, Vdrm
100V
Gate Trigger Current Max, Igt
25µA
Current It Av
2.6A
On State Rms Current It(rms)
4A
Peak Non Rep Surge Current Itsm 50hz
25A
Holding Current Max Ih
5mA
Rohs Compliant
Yes
Repetitive Peak Off-state Volt
100V
Off-state Voltage
100V
Average On-state Current
2.6A
Hold Current
5mA
Gate Trigger Current (max)
75uA
Gate Trigger Voltage (max)
800mV
Peak Reverse Gate Voltage
18V
Package Type
DPAK
Peak Repeat Off Current
10uA
Peak Surge On-state Current (max)
35A
On State Voltage(max)
2.2@8.2AV
Mounting
Surface Mount
Pin Count
2 +Tab
Operating Temp Range
-40C to 110C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MCR703AT4G
MCR703AT4GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCR703AT4G
Manufacturer:
ON
Quantity:
12 500
2. Case 369C when surface mounted on minimum pad sizes recommended.
3. R
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Peak Repetitive Forward or Reverse Blocking Current
(V
Peak Forward “On” Voltage
Gate Trigger Current (Continuous dc) (Note 3) (V
Gate Trigger Voltage (Continuous dc) (Note 3)
Gate Non-Trigger Voltage (Note 3) (V
Holding Current
Peak Reverse Gate Blocking Voltage (I
Peak Reverse Gate Blocking Current (V
Total Turn-On Time (Source Voltage = 12 V, R
(I
Critical Rate of Rise of Off−State Voltage
Repetitive Critical Rate of Rise of On−State Current
MCR703AT4
MCR703AT4G
MCR706AT4
MCR706AT4G
MCR708A
MCR708AG
MCR708A1
MCR708A1G
MCR708AT4
MCR708AT4G
TM
AK
(I
(V
(V
(Initiating Current = 20 mA) T
(V
(Cf = 60 Hz, I
GK
TM
= 8.2 A, I
= Rated V
AK
AK
D
current not included in measurement.
= Rated V
= 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle)
= 12 Vdc, R
= 12 Vdc, R
GT
Device
DRM
PK
= 2 mA, Rated V
DRM
= 30 A, PW = 100 ms, diG/dt = 1 A/ms)
or V
GK
L
, R
= 24 W)
= 1 kW) T
RRM
GK
= 1 kW, Exponential Waveform, T
; R
GK
Characteristic
C
C
DRM
= −40°C
= 1 kW)
= 25°C
AK
Characteristic
) (Rise Time = 20 ns, Pulse Width = 10 ms)
GR
GR
= 12 Vdc, R
(T
= 10 mA)
C
= 10 V)
= 25°C unless otherwise noted)
Package Type
S
= 6 kW)
AK
DPAK−3
DPAK−3
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
= 12 Vdc, R
L
= 100 W, T
http://onsemi.com
C
= 110°C)
L
C
= 24 W)
T
T
T
= 110°C)
T
T
T
2
C
C
C
C
C
C
= −40°C
= −40°C
= 110°C
= 25°C
= 25°C
= 25°C
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
369C
369C
369C
369C
369C
369C
369D
369D
369C
369C
I
DRM
Symbol
V
I
dv/dt
V
di/dt
V
V
RGM
I
RGM
GT
I
t
, I
GD
TM
GT
gt
H
RRM
Symbol
R
R
T
qJC
qJA
L
Min
0.2
10
2500 Tape & Reel
2500 Tape & Reel
2500 Tape & Reel
2500 Tape & Reel
2500 Tape & Reel
2500 Tape & Reel
12.5
Typ
2.0
25
10
75 Units / Rail
75 Units / Rail
75 Units / Rail
75 Units / Rail
Shipping
Max
260
3.0
80
Max
200
300
100
2.2
0.8
1.0
5.0
1.2
10
75
10
18
°C/W
°C/W
Unit
Unit
V/ms
A/ms
mA
mA
mA
mA
°C
ms
V
V
V
V

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