BT151X-800R,127 NXP Semiconductors, BT151X-800R,127 Datasheet - Page 4

THYRISTOR 800V 12A SOT186A

BT151X-800R,127

Manufacturer Part Number
BT151X-800R,127
Description
THYRISTOR 800V 12A SOT186A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT151X-800R,127

Package / Case
TO-220-3 Full Pack
Scr Type
Standard Recovery
Voltage - Off State
800V
Voltage - Gate Trigger (vgt) (max)
1.5V
Voltage - On State (vtm) (max)
1.75V
Current - On State (it (av)) (max)
7.5A
Current - On State (it (rms)) (max)
12A
Current - Gate Trigger (igt) (max)
15mA
Current - Hold (ih) (max)
20mA
Current - Off State (max)
500µA
Current - Non Rep. Surge 50, 60hz (itsm)
120A, 132A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Current - On State (it (rms) (max)
12A
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
110 A
On-state Rms Current (it Rms)
12 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.4 V
Gate Trigger Current (igt)
2 mA
Holding Current (ih Max)
20 mA
Forward Voltage Drop
1.4 V
Mounting Style
Through Hole
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Off-state Capacitance Co
10 pF
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934038070127
BT151X-800R
BT151X-800R
Philips Semiconductors
9397 750 13162
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values.
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
I
TSM
(A)
(A)
10
10
10
25
20
15
10
5
0
3
2
10
10
t
f = 50 Hz; T
duration; maximum values.
p
5
2
10 ms.
hs
10
dl
87 C.
T
1
/dt limit
1
surge duration (s)
10
001aaa955
4
10
Rev. 04 — 9 June 2004
Fig 5. RMS on-state current as a function of heatsink
I
T(RMS)
(A)
16
12
8
4
0
temperature; maximum values.
50
10
3
0
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT151X series
50
t
p
T
I
T
j
(s)
initial = 25 C max
t
p
100
T
001aaa956
001aaa960
hs
I
TSM
( C)
t
10
150
Thyristors
2
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