BT151S-650R,118 NXP Semiconductors, BT151S-650R,118 Datasheet - Page 5

• Manufacturer Part Number: BT151S-650R,118
• Description: THYRISTOR 650V 12A SOT428
• Manufacturer: NXP Semiconductors

Specifications of BT151S-650R,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Scr Type: Standard Recovery
• Voltage - Off State: 650V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 132A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 132 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934048730118; BT151S-650R /T3; BT151S-650R /T3

NXP Semiconductors
5. Thermal characteristics
Table 4.
BT151S_SER_L_R_5
Product data sheet
Symbol
R
R
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
th(j-mb)
th(j-a)
Z
th(j-mb)
(K/W)
10
10
10
10
1
1
2
3
10
5
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
4
10
3
Rev. 05 — 9 October 2006
Conditions
see
mounted on an FR4
printed-circuit board; see
Figure 14
Figure 6
10
2
BT151S series L and R
10
1
Min
-
-
P
1
Typ
-
75
t
p
T
t
p
© NXP B.V. 2006. All rights reserved.
(s)
001aaa963
Max
1.8
-
=
t
T
t
p
Thyristors
10
Unit
K/W
K/W
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