BT151S-500R,118 NXP Semiconductors, BT151S-500R,118 Datasheet - Page 6

• Manufacturer Part Number: BT151S-500R,118
• Description: THYRISTOR 500V 12A SOT428
• Manufacturer: NXP Semiconductors

Specifications of BT151S-500R,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Scr Type: Standard Recovery
• Voltage - Off State: 500V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 132A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 132 A
• Rated Repetitive Off-state Voltage Vdrm: 500 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934048710118; BT151S-500R /T3; BT151S-500R /T3

NXP Semiconductors
6. Characteristics
Table 5.
T
BT151S_SER_L_R_5
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
I
Dynamic characteristics
dV
t
t
GT
L
H
D
R
gt
q
j
T
GT
= 25 C unless otherwise stated.
D
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
reverse current
rate of rise of off-state
voltage
gate-controlled turn-on
time
commutated turn-off
time
Conditions
V
V
Figure 10
V
Figure 11
I
I
I
T
V
V
V
exponential waveform; see
I
I
V
I
(dI
R
T
T
T
TM
G
TM
j
D
D
D
D
R
DM
DM
GK
BT151S-500L
BT151S-500R
BT151S-650L
BT151S-650R
BT151S-800R
R
gate open circuit
= 23 A; see
= 100 mA; V
= 100 mA; V
= 125 C
= 100 mA; dI
T
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 40 A; V
= 20 A; V
/dt)
GK
= 0.67
= 0.67
= 100
DRM(max)
RRM(max)
= 100
M
= 30 A/ s; dV
Rev. 05 — 9 October 2006
T
GT
GT
D
R
= 100 mA; see
V
V
Figure 9
= 100 mA; see
= 100 mA; see
D
D
= V
= 25 V;
; T
; T
DRM(max)
DRM(max)
G
= 12 V; see
= V
/dt = 5 A/ s
j
j
DRM(max)
= 125 C
= 125 C
DRM(max)
D
; T
; T
/dt = 50 V/ s;
j
j
;
= 125 C;
= 125 C;
Figure 12
;
Figure 8
Figure 7
BT151S series L and R
Min
-
-
-
-
-
-
-
-
-
0.25
-
-
200
50
-
-
Typ
2
2
2
2
2
10
7
1.4
0.6
0.4
0.1
0.1
1000
130
2
70
© NXP B.V. 2006. All rights reserved.
Max
5
15
5
15
15
40
20
1.75
1.5
-
0.5
0.5
-
-
-
-
Thyristors
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
mA
V/ s
V/ s
s
s
6 of 13