ST230C14C0 Vishay, ST230C14C0 Datasheet - Page 2

• Manufacturer Part Number: ST230C14C0
• Description: SCR PHASE CONT 1400V 410A A-PUK
• Manufacturer: Vishay

Specifications of ST230C14C0

• Scr Type: Standard Recovery
• Voltage - Off State: 1400V
• Voltage - Gate Trigger (vgt) (max): 3V
• Voltage - On State (vtm) (max): 1.69V
• Current - On State (it (av)) (max): 410A
• Current - On State (it (rms)) (max): 780A
• Current - Gate Trigger (igt) (max): 150mA
• Current - Hold (ih) (max): 600mA
• Current - Off State (max): 30mA
• Current - Non Rep. Surge 50, 60hz (itsm): 5700A, 5970A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AB, A-PUK
• Current - On State (it (rms) (max): 780A
• Mounting Style: SMD/SMT
• Peak Repetitive Off-state Voltage, Vdrm: 1.4kV
• Gate Trigger Current Max, Igt: 150mA
• Current It Av: 410A
• On State Rms Current It(rms): 780A
• Peak Non Rep Surge Current Itsm 50hz: 5.7kA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *ST230C14C0; VS-ST230C14C0; VS-ST230C14C0; VSST230C14C0; VSST230C14C0

ELECTRICAL SPECIFICATIONS
Voltage Ratings
Bulletin I25162 rev. D 04/03
On-state Conduction
Switching
2
ST230C..C Series
I
I
I
I
I
V
V
r
r
V
I
I
t
t
di/dt
H
L
d
q
T(AV)
T(RMS)
TSM
2
2
t1
t2
Type number
ST230C..C
T(TO)
T(TO)
TM
t
t
1
2
Parameter
Parameter
Max. average on-state current
@ Heatsink temperature
Max. RMS on-state current
Max. peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold
voltage
High level value of threshold
voltage
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
Maximum holding current
Max. (typical) latching current
Typical delay time
Typical turn-off time
Max. non-repetitive rate of rise
of turned-on current
Voltage
2
2
Code
t for fusing
04
08
12
14
16
18
20
t for fusing
V
peak and off-state voltage
DRM
/V
RRM
1200
1400
1600
1800
2000
, max. repetitive
400
800
ST230C..C
ST230C..C
1000 (300)
410 (165)
V
55 (85)
1000
5700
5970
4800
5000
1630
1.69
0.98
0.88
0.81
780
163
148
115
105
0.92
600
100
1.0
KA
KA
Units Conditions
Units Conditions
A/µs
m
°C
mA
µs
A
A
V
V
2
2
s
s
(16.7% x
(I >
Gate drive 20V, 20 , t
T
Gate current 1A, di
V
I
dv/dt = 20V/µs, Gate 0V 100
180° conduction, half sine wave
double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 0.1 to 10ms, no voltage reapplied
(I >
I
(16.7% x
T
TM
pk
J
d
J
repetitive peak voltage
= 880A, T
= T
V
= 0.67% V
= 300A, T
= 25°C, anode supply 12V resistive load
RSM
x I
x I
J
max, anode voltage
T(AV)
T(AV)
, maximum non-
x I
x I
),T
),T
1300
1500
1700
1900
2100
J
No voltage
No voltage
reapplied
100% V
reapplied
reapplied
100% V
reapplied
500
900
J
DRM
T(AV)
T(AV)
= T
V
= T
J
J
= T
= T
, T
J
J
< I <
< I <
max, t
g
max, di/dt = 20A/µs, V
J
J
J
/dt = 1A/µs
RRM
RRM
= 25°C
max.
max.
r
p
x I
x I
1µs
= 10ms sine pulse
T(AV)
T(AV)
Sinusoidal half wave,
Initial T
80% V
t
), T
), T
p
= 500µs
J
J
J
I
DRM
= T
DRM
= T
@ T
= T
www.irf.com
J
J
J
/I
J
max.
max.
max.
R
RRM
mA
= T
30
= 50V
J
max.
max