MCR12NG ON Semiconductor, MCR12NG Datasheet

MCR12NG

Manufacturer Part Number

MCR12NG

Description

THYRISTOR SCR 12A 800V TO220AB

Manufacturer

ON Semiconductor

Type

SCRr

Datasheets

1.MCR12NG.pdf (4 pages)

2.MCR12NG.pdf (3 pages)

Specifications of MCR12NG

Scr Type

Standard Recovery

Voltage - Off State

800V

Voltage - Gate Trigger (vgt) (max)

Voltage - On State (vtm) (max)

2.2V

Current - On State (it (rms)) (max)

12A

Current - Gate Trigger (igt) (max)

20mA

Current - Hold (ih) (max)

40mA

Current - Off State (max)

10µA

Current - Non Rep. Surge 50, 60hz (itsm)

100A @ 60Hz

Operating Temperature

-40°C ~ 125°C

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Current - On State (it (rms) (max)

12A

Repetitive Peak Off-state Volt

800V

Off-state Voltage

800V

Hold Current

40mA

Gate Trigger Current (max)

20mA

Gate Trigger Voltage (max)

Package Type

TO-220AB

Peak Repeat Off Current

10uA

Peak Surge On-state Current (max)

100A

On State Voltage(max)

2.2@24AV

Mounting

Through Hole

Pin Count

3 +Tab

Operating Temp Range

-40C to 125C

Operating Temperature Classification

Automotive

Current Squared Time Rating

Current, Forward

12 A

Current, Surge

100 A

Primary Type

SCR

Resistance, Thermal, Junction To Case

2.2 °C/W

Temperature, Junction, Maximum

+125 °C

Temperature, Operating

-40 to +125 °C

Voltage, Forward

2.2 V

Voltage, Reverse

800 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - On State (it (av)) (max)

Lead Free Status / Rohs Status

Compliant

Other names

MCR12NGOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCR12NG

Manufacturer:

EPCOS

Quantity:

1 001

Current page: 1 of 4
Download datasheet (56Kb)

MCR12D, MCR12M, MCR12N

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

motor controls, heating controls, and power supplies; or wherever

half−wave silicon gate−controlled devices are needed.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. V

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

December, 2005 − Rev. 4

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Peak Repetitive Off−State Voltage (Note 1

50 to 60 Hz, Gate Open)

On-State RMS Current

(180° Conduction Angles; T

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, T

Circuit Fusing Consideration (t = 8.33 ms)

Forward Peak Gate Power

(Pulse Width ≤ 1.0 ms, T

Forward Average Gate Power

(t = 8.3 ms, T

Forward Peak Gate Current

(Pulse Width ≤ 1.0 ms, T

Operating Junction Temperature Range

Storage Temperature Range

Designed primarily for half-wave ac control applications, such as

Ease of Design

Blocking Voltage to 800 Volts

On−State Current Rating of 12 Amperes RMS at 80°C

High Surge Current Capability − 100 Amperes

Rugged, Economical TO−220AB Package

Glass Passivated Junctions for Reliability and Uniformity

Minimum and Maximum Values of IGT, VGT an IH Specified for

High Immunity to dv/dt − 100 V/msec Minimum at 125°C

Pb−Free Packages are Available*

apply for zero or negative gate voltage; positive gate voltage shall not be

applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage ratings

of the devices are exceeded.

DRM

= −40 to 125°C, Sine Wave,

and V

RRM

= 80°C)

Rating

for all types can be applied on a continuous basis. Ratings

= 80°C)

= 25°C unless otherwise noted)

Preferred Device

= 80°C)

MCR12M

MCR12D

MCR12N

= 125°C)

)

Symbol

T(RMS)

TSM

G(AV)

DRM,

RRM

stg

−40 to +125

−40 to +150

Value

400

600

800

100

5.0

0.5

2.0

Unit

°C

sec

MCR12D

MCR12DG

MCR12M

MCR12MG

MCR12N

MCR12NG

Preferred devices are recommended choices for future use

and best overall value.

Device

ORDERING INFORMATION

400 thru 800 VOLTS

12 AMPERES RMS

AKA = Diode Polarity

http://onsemi.com

PIN ASSIGNMENT

CASE 221A−09

TO−220AB

= Assembly Location

= Year

= Work Week

= D, M, or N

= Pb−Free Package

STYLE 3

TO−220AB

(Pb−Free)

Package

SCRs

Publication Order Number:

Cathode

Anode

Gate

50 Units / Rail

MARKING

DIAGRAM

MCR12xG

AY WW

Shipping

AKA

MCR12/D

Related parts for MCR12NG

MCR12NG Summary of contents

Page 1

... I 2 °C T −40 to +125 J °C T −40 to +150 stg MCR12D MCR12DG MCR12M MCR12MG MCR12N MCR12NG Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com SCRs 12 AMPERES RMS 400 thru 800 VOLTS MARKING DIAGRAM AY WW MCR12xG AKA TO−220AB CASE 221A− ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (V = Rated V and V ; Gate Open) ...

Page 3

MAXIMUM @ T = 25°C J MAXIMUM @ 0.1 0.5 1.0 1.5 2 INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) T Figure 3. Typical On−State Characteristics 100 10 1 −40 −25 − ...

Page 4

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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