C106DG ON Semiconductor, C106DG Datasheet - Page 4
![THYRISTOR SCR 4A 400V TO225AA](/photos/5/66/56603/488-to-225aa_sml.jpg)
C106DG
Manufacturer Part Number
C106DG
Description
THYRISTOR SCR 4A 400V TO225AA
Manufacturer
ON Semiconductor
Type
SCRr
Specifications of C106DG
Scr Type
Sensitive Gate
Voltage - Off State
400V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
2.2V
Current - On State (it (av)) (max)
2.55A
Current - On State (it (rms)) (max)
4A
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
3mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
20A @ 60Hz
Operating Temperature
-40°C ~ 110°C
Mounting Type
Through Hole
Package / Case
TO-225-3
Current - On State (it (rms) (max)
4A
Current Squared Time Rating
1.65
Current, Forward
4 A
Current, Surge
20 A
Package Type
TO-225AA
Primary Type
SCR
Resistance, Thermal, Junction To Case
3 °C/W
Temperature, Junction, Maximum
+110 °C
Temperature, Operating
-40 to +110 °C
Voltage, Forward
2.2 V
Voltage, Reverse
400 V
Repetitive Peak Off-state Volt
400V
Off-state Voltage
400V
Average On-state Current
2.55A
Hold Current
3mA
Gate Trigger Current (max)
200uA
Gate Trigger Voltage (max)
800mV
Peak Reverse Gate Voltage
6V
Peak Repeat Off Current
10uA
Peak Surge On-state Current (max)
20A
On State Voltage(max)
2.2@4AV
Mounting
Through Hole
Pin Count
3 +Tab
Operating Temp Range
-40C to 110C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
C106DGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
C106DG
Manufacturer:
ON/安森美
Quantity:
20 000
100
100
110
0.7
1.0
0.9
0.8
0.6
0.5
0.4
0.3
0.2
90
80
70
60
50
40
30
20
10
10
1
-40 -25
-45 -25
0
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz
Figure 3. Typical Gate Trigger Current versus
Figure 5. Typical Gate Trigger Voltage versus
.4
I
T(AV)
Figure 1. Average Current Derating
-10
-10
.8
AVERAGE ON‐STATE CURRENT (AMPERES)
T
T
J
J
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
1.2
Junction Temperature
Junction Temperature
5
5
1.6
20
20
2.0
35
35
2.4
50
50
DC
2.8
65
65
3.2
80
80
http://onsemi.com
3.6
95
95
110
110
4.0
4
1000
1000
100
100
10
10
10
8
6
4
2
0
-40 -25
-40 -25
0
Figure 2. Maximum On−State Power Dissipation
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.
.4
Figure 6. Typical Latching Current versus
Figure 4. Typical Holding Current versus
I
T(AV)
-10
-10
.8
AVERAGE ON‐STATE CURRENT (AMPERES)
T
T
J
J
, JUNCTION TEMPERATURE (°C)
Junction Temperature
, JUNCTION TEMPERATURE (°C)
Junction Temperature
1.2
5
5
1.6
20
20
JUNCTION TEMPERATURE ≈ 110°C
2.0
35
35
2.4
50
50
2.6
65
65
3.2
80
80
DC
3.6
95
95
110
110
4.0