MCR716T4G ON Semiconductor, MCR716T4G Datasheet - Page 3
![THYRISTOR SCR 4A 400V DPAK](/photos/5/30/53089/dpak_369c_sml.jpg)
MCR716T4G
Manufacturer Part Number
MCR716T4G
Description
THYRISTOR SCR 4A 400V DPAK
Manufacturer
ON Semiconductor
Datasheet
1.MCR716T4G.pdf
(5 pages)
Specifications of MCR716T4G
Scr Type
Sensitive Gate
Voltage - Off State
400V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
2.2V
Current - On State (it (av)) (max)
2.6A
Current - On State (it (rms)) (max)
4A
Current - Gate Trigger (igt) (max)
75µA
Current - Hold (ih) (max)
5mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
25A @ 60Hz
Operating Temperature
-40°C ~ 110°C
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Current - On State (it (rms) (max)
4A
Breakover Current Ibo Max
25 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
0.01 mA
On-state Rms Current (it Rms)
4 A
Forward Voltage Drop
1.3 V
Gate Trigger Voltage (vgt)
0.5 V
Maximum Gate Peak Inverse Voltage
18 V
Gate Trigger Current (igt)
25 uA
Holding Current (ih Max)
1 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MCR716T4GOS
MCR716T4GOS
MCR716T4GOSTR
MCR716T4GOS
MCR716T4GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCR716T4G
Manufacturer:
ON Semiconductor
Quantity:
1 100
Company:
Part Number:
MCR716T4G
Manufacturer:
ON
Quantity:
12 500
100
105
100
1.0
0.1
110
10
95
Symbol
V
I
V
I
V
I
DRM
RRM
H
DRM
RRM
TM
0.5
0
Typical @ T
1.0
V
T
Figure 3. On−State Characteristics
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 1. RMS Current Derating
I
Parameter
Peak Repetitive Off−State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off−State Reverse Voltage
Peak Reverse Blocking Current
Peak On−State Voltage
Holding Current
1.0
T(RMS)
J
= 25°C
Maximum @ T
1.5
, RMS ON-STATE CURRENT (AMPS)
2.0
2.0
J
= 25°C
2.5
3.0
3.0
Voltage Current Characteristic of SCR
Maximum @ T
30°
DC
3.5
4.0
J
= 110°C
4.0
60°
90°
120°
180°
http://onsemi.com
4.5
5.0
I
Reverse Avalanche Region
Anode −
RRM
Reverse Blocking Region
3
at V
0.01
1.0
0.1
RRM
5.0
4.0
3.0
2.0
1.0
(off state)
0
0.1
0
Figure 4. Transient Thermal Response
on state
Figure 2. On−State Power Dissipation
1.0
I
1.0
T(RMS)
+ Current
, RMS ON-STATE CURRENT (AMPS)
Forward Blocking Region
I
H
10
2.0
t, TIME (ms)
V
TM
(off state)
I
100
DRM
3.0
Anode +
at V
Z
qJC(t)
DRM
1000
= R
+ Voltage
4.0
qJC(t)
DC
180°
120°
90°
60°
30°
•r(t)
10,000
5.0