BF959G ON Semiconductor, BF959G Datasheet - Page 2

• Manufacturer Part Number: BF959G
• Description: TRANS RF NPN 20V 100MA TO-92
• Manufacturer: ON Semiconductor

Specifications of BF959G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 700MHz
• Noise Figure (db Typ @ F): 3dB @ 200MHz
• Power - Max: 625mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 20mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -

ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
Collector −Base Breakdown Voltage (I
Emitter −Base Breakdown Voltage (I
Collector Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage (I
Base −Emitter Saturation Voltage (I
Current −Gain − Bandwidth Product
Common Emitter Feedback Capacitance
Noise Figure (I
(I
(I
(I
(I
(V
C
C
C
C
CB
= 5.0 mAdc, V
= 20 mAdc, V
= 20 mAdc, V
= 30 mAdc, V
= 10 Vdc, P
C
= 4.0 mA, V
CE
CE
CE
f
CE
= 0, f = 10 MHz)
= 10 Vdc)
= 10 Vdc, f = 100 MHz)
= 10 Vdc, f = 100 MHz)
= 10 Vdc)
CB
Characteristic
CE
= 20 Vdc, I
= 10 V, R
C
E
= 30 mAdc, I
C
= 10 mAdc, I
C
C
= 10 mAdc, I
E
= 30 mAdc, I
S
= 1.0 mAdc, I
= 0)
= 50 W, f = 200 MHz)
A
= 25°C unless otherwise noted)
B
C
= 2.0 mAdc)
E
= 0)
B
= 0)
B
= 2.0 mAdc)
http://onsemi.com
= 0)
BF959
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
I
CBO
h
C
N
f
FE
T
re
f
Min
700
600
3.0
20
30
35
40
−
−
−
−
−
0.65
Typ
3.0
−
−
−
−
−
−
−
−
−
−
Max
100
1.0
1.0
−
−
−
−
−
−
−
−
−
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
−