BF959 ON Semiconductor, BF959 Datasheet - Page 2
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BF959
Manufacturer Part Number
BF959
Description
TRANS RF NPN 20V 100MA TO-92
Manufacturer
ON Semiconductor
Datasheet
1.BF959.pdf
(4 pages)
Specifications of BF959
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
700MHz
Noise Figure (db Typ @ F)
3dB @ 200MHz
Power - Max
625mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 20mA, 10V
Current - Collector (ic) (max)
100mA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gain
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BF959
Manufacturer:
SIEMENS
Quantity:
150
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
Collector −Base Breakdown Voltage (I
Emitter −Base Breakdown Voltage (I
Collector Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage (I
Base −Emitter Saturation Voltage (I
Current −Gain − Bandwidth Product
Common Emitter Feedback Capacitance
Noise Figure (I
(I
(I
(I
(I
(V
C
C
C
C
CB
= 5.0 mAdc, V
= 20 mAdc, V
= 20 mAdc, V
= 30 mAdc, V
= 10 Vdc, P
C
= 4.0 mA, V
CE
CE
CE
f
CE
= 0, f = 10 MHz)
= 10 Vdc)
= 10 Vdc, f = 100 MHz)
= 10 Vdc, f = 100 MHz)
= 10 Vdc)
CB
Characteristic
CE
= 20 Vdc, I
= 10 V, R
C
E
= 30 mAdc, I
C
= 10 mAdc, I
C
C
= 10 mAdc, I
E
= 30 mAdc, I
S
= 1.0 mAdc, I
= 0)
= 50 W, f = 200 MHz)
A
= 25°C unless otherwise noted)
B
C
= 2.0 mAdc)
E
= 0)
B
= 0)
B
= 2.0 mAdc)
http://onsemi.com
= 0)
BF959
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
I
CBO
h
C
N
f
FE
T
re
f
Min
700
600
3.0
20
30
35
40
−
−
−
−
−
0.65
Typ
3.0
−
−
−
−
−
−
−
−
−
−
Max
100
1.0
1.0
−
−
−
−
−
−
−
−
−
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
−