MPS5179G ON Semiconductor, MPS5179G Datasheet - Page 2

• Manufacturer Part Number: MPS5179G
• Description: TRANS NPN RF SS 12V TO92
• Manufacturer: ON Semiconductor

Specifications of MPS5179G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 2GHz
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 3mA, 1V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Other names: MPS5179GOS

1. f
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL− SIGNAL CHARACTERISTICS
Collector −Emitter Sustaining Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product (Note 1)
Collector−Base Capacitance
Small Signal Current Gain
T
(I
(I
(I
(V
(V
(I
(I
(I
(I
(V
(I
C
C
E
C
C
C
C
C
is defined as the frequency at which |h
CB
CB
CB
= 3.0 mAdc, I
= 0.001 mAdc, I
= 0.01 mAdc, I
= 3.0 mAdc, V
= 10 mAdc, I
= 10 mAdc, I
= 5.0 mAdc, V
= 2.0 mAdc, V
= 15 Vdc, I
= 15 Vdc, I
= 10 Vdc, I
B
B
E
E
E
B
CE
CE
CE
C
= 1.0 mAdc)
= 1.0 mAdc)
= 0)
= 0, T
= 0, f = 0.1 to 1.0 MHz)
= 0)
E
= 0)
= 1.0 Vdc)
= 6.0 Vdc, f = 100 MHz)
= 6.0 Vdc, f = 1.0 kHz)
= 0)
A
= 150°C)
Characteristic
(T
fe
A
| extrapolates to unity.
= 25°C unless otherwise noted)
http://onsemi.com
MPS5179
2
V
V
V
Symbol
V
V
CEO(sus)
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
h
C
CBO
h
f
FE
T
cb
fe
Min
900
2.5
12
20
25
25
−
−
−
−
−
2000
Max
0.02
250
300
1.0
0.4
1.0
1.0
−
−
−
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
−
−