MMBTH10LT1 ON Semiconductor, MMBTH10LT1 Datasheet
MMBTH10LT1
Manufacturer Part Number
MMBTH10LT1
Description
TRANS SS VHF NPN 25V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBTH10LT1G.pdf
(5 pages)
Specifications of MMBTH10LT1
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
25V
Frequency - Transition
650MHz
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 4mA, 10V
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector (ic) (max)
-
Gain
-
Noise Figure (db Typ @ F)
-
Other names
MMBTH10LT1OSCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBTH10LT1
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MMBTH10LT1G
Manufacturer:
ON
Quantity:
15 000
Company:
Part Number:
MMBTH10LT1G
Manufacturer:
ON Semiconductor
Quantity:
2 600
Company:
Part Number:
MMBTH10LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBTH10LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MMBTH10LT1G,
MMBTH10-4LT1G
VHF/UHF Transistor
NPN Silicon
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 3
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
FR−5 Board (Note 1)
T
Derate above 25°C
Junction to Ambient (Note 1)
Alumina Substrate (Note 2)
T
Derate above 25°C
Junction to Ambient (Note 2)
Temperature Range
A
A
= 25°C
= 25°C
Characteristic
Rating
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
θJA
θJA
D
D
stg
−55 to
Value
+150
Max
225
556
300
417
3.0
1.8
2.4
25
30
1
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBTH10LT1G
MMBTH10LT3G
MMBTH10−4LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MMBTH10LT1G
(Note: Microdot may be in either location)
Device
3EM MG
3EM, 3E4 = Specific Device Code
M
G
ORDERING INFORMATION
G
MARKING DIAGRAMS
http://onsemi.com
BASE
SOT−23 (TO−236AB)
1
1
= Date Code*
= Pb−Free Package
CASE 318
STYLE 6
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
SOT−23
COLLECTOR
2
EMITTER
Publication Order Number:
3
2
MMBTH10−04LT1G
3
3E4 MG
MMBTH10LT1/D
10000/Tape &
3000/Tape &
3000/Tape &
Shipping
G
Reel
Reel
Reel
†
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MMBTH10LT1 Summary of contents
Page 1
... SOT−23 10000/Tape & (Pb−Free) Reel MMBTH10−4LT1G SOT−23 3000/Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBTH10LT1/D † ...
Page 2
... Vdc 31.8 MHz 25°C unless otherwise noted) A Symbol V (BR)CEO V (BR)CBO V (BR)EBO I CBO I EBO h FE MMBTH10LT1 MMBTH10−4LT1 V CE(sat MMBTH10LT1 MMBTH10−4LT1 rb′C c http://onsemi.com 2 Min Typ Max Unit 25 − − Vdc 30 − − Vdc 3.0 − − Vdc − − ...
Page 3
COMMON−BASE y PARAMETERS versus FREQUENCY ( 100 200 300 400 f, FREQUENCY (MHz) Figure 1. Rectangular Form ...
Page 4
COMMON−BASE y PARAMETERS versus FREQUENCY ( 5.0 4.0 3 2.0 1.0 0 100 200 300 400 f, FREQUENCY (MHz) Figure 5. Rectangular Form 10 9.0 8.0 7.0 6.0 5 4.0 3.0 2.0 1.0 0 ...
Page 5
... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBTH10LT1/D ...