MPSH17 ON Semiconductor, MPSH17 Datasheet - Page 2

• Manufacturer Part Number: MPSH17
• Description: TRANS NPN RF SS 15V TO92
• Manufacturer: ON Semiconductor

Specifications of MPSH17

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 800MHz
• Noise Figure (db Typ @ F): 6dB @ 200MHz
• Gain: 24dB
• Power - Max: 350mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 5mA, 10V
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector (ic) (max): -
• Other names: MPSH17OS

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL− SIGNAL CHARACTERISTICS
FUNCTIONAL TEST
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Collector−Base Capacitance
Small−Signal Current Gain
Noise Figure
Amplifier Power Gain
(I
(I
(I
(V
(I
(I
(I
(V
(I
(I
(I
C
C
E
C
C
C
C
C
C
CB
CB
= 10 mAdc, I
= 1.0 mAdc, I
= 100 mAdc, I
= 5.0 mAdc, V
= 10 mAdc, I
= 5.0 mAdc, V
= 5.0 mAdc, V
= 5.0 mAdc, V
= 5.0 mAdc, V
= 15 Vdc, I
= 10 Vdc, f = 1.0 MHz)
C
B
E
B
E
= 0)
CE
CE
CE
CC
CC
= 1.0 mAdc)
= 0)
Characteristic
= 0)
= 0)
= 10 Vdc)
= 10 Vdc, f = 100 MHz)
= 10 Vdc, f = 1.0 kHz)
= 12 Vdc, R
= 12 Vdc, R
(T
S
S
A
= 50 W, f = 200 MHz)
= 50 W, f = 200 MHz)
= 25°C unless otherwise noted)
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MPSH17
2
V
V
V
Symbol
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
I
G
CBO
h
C
NF
h
f
FE
T
cb
fe
pe
Min
800
3.0
0.3
15
20
25
30
−
−
−
−
Typ
24
−
−
−
−
−
−
−
−
−
−
Max
100
250
0.5
0.9
6.0
−
−
−
−
−
−
nAdc
MHz
Unit
Vdc
Vdc
Vdc
pF
dB
dB
−
−
−