MBC13900NT1 Freescale Semiconductor, MBC13900NT1 Datasheet - Page 9
![TRANS RF NPN LO NOISE SOT-343](/photos/5/65/56584/sot-343_pkg_sml.jpg)
MBC13900NT1
Manufacturer Part Number
MBC13900NT1
Description
TRANS RF NPN LO NOISE SOT-343
Manufacturer
Freescale Semiconductor
Datasheet
1.MBC13900T1.pdf
(24 pages)
Specifications of MBC13900NT1
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6.5V
Frequency - Transition
15GHz
Noise Figure (db Typ @ F)
0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
Gain
15dB ~ 22dB
Power - Max
188mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 2V
Current - Collector (ic) (max)
20mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBC13900NT1
Manufacturer:
ON/安森美
Quantity:
20 000
5
A flexible applications board topology has been developed to demonstrate the performance of the
MBC13900 at 900 and 1900 MHz. The designs are a compromise of the competing performance
requirements of gain, noise figure, input third-order intercept point (IIP3) and return losses. PCB, samples
and assembly information is available from Freescale under part number KITMBC13900.
5.1
Figure 18
design goals for the circuit are:
Freescale Semiconductor
NF < 1.2 dB
Gain > 19 dB
Return Loss > 10 dB, input and output
Unconditional stability from 100 MHz to 6 GHz.
Applications Information
900 MHz LNA
shows the schematic and
Figure 16. One dB Compression Point versus Collector Current
Figure 17. One dB Compression Point versus Collector Current
-2.0
-6.0
-2.0
-6.0
-10
-14
-10
-14
6.0
2.0
6.0
2.0
14
10
14
10
0
0
Figure 19
2.0
MBC13900 Technical Data, Rev. 1.1
2.0
4.0
4.0
I
I
C
C
6.0
6.0
shows the component placement for a 900 MHz LNA. The
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
8.0
8.0
10
10
12
12
14
14
f = 900 MHz
f = 1.9 GHz
16
16
3.0 V
3.0 V
2.0 V
2.0 V
18
18
20
20
Applications Information
9