MRF899 Freescale Semiconductor, MRF899 Datasheet - Page 2

• Manufacturer Part Number: MRF899
• Description: TRANS RF 150W 900MHZ NI-860C3
• Manufacturer: Freescale Semiconductor

Specifications of MRF899

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 28V
• Gain: 8dB ~ 9dB
• Power - Max: 230W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 1A, 5V
• Current - Collector (ic) (max): 25A
• Mounting Type: Surface Mount
• Package / Case: NI-860C3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Noise Figure (db Typ @ F): -

ELECTRICAL CHARACTERISTICS — continued
FUNCTIONAL CHARACTERISTICS
MRF899
Common–Emitter Amplifier Power Gain
Collector Efficiency
3rd Order Intermodulation Distortion
Output Mismatch Stress
2
B1, B2 — Ferrite Bead, Ferroxcube #56–590–65–3B
C1, C2, C24, C25 — 43 pF, B Case, ATC Chip Capacitor
C3, C4, C20, C21 — 100 pF, B Case, ATC Chip Capacitor
C5, C6, C12, C13 — 1000 pF, B Case, ATC Chip Capacitor
C7, C8, C14, C15 — 1800 pF, AVX Chip Capacitor
C9 — 9.1 pF, A Case, ATC Chip Capacitor
C10, C11, C17, C18, C22, C23 — 10 µF, Electrolytic Capacitor
Panasonic
C16 — 3.9 pF, B Case, ATC Chip Capacitor
C19 — 0.8 pF, B Case, ATC Chip Capacitor
C26 — 200 µF, Electrolytic Capacitor Mallory Sprague
C27 — 500 µF Electrolytic Capacitor
V
f
V
f
V
f
V
f
2
2
2
2
CC
CC
CC
CC
= 900.1 MHz
= 900.1 MHz
= 900.1 MHz
= 900.1 MHz, VSWR = 5:1 (all phase angles)
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
out
out
out
out
= 150 Watts (PEP), I
= 150 Watts (PEP), I
= 150 Watts (PEP), I
= 150 Watts (PEP), I
Characteristic
cq
cq
cq
cq
Figure 1. 900 MHz Power Gain Test Circuit
= 300 mA, f
= 300 mA, f
= 300 mA, f
= 300 mA, f
1
1
1
1
(T
= 900 MHz,
= 900 MHz,
= 900 MHz,
= 900 MHz,
C
= 25°C unless otherwise noted.)
L1 — 5 Turns 24 AWG IDIA 0.059″ Choke, 19.8 nH
L2, L3, L7, L9 — 4 Turns 20 AWG IDIA 0.163″ Choke
L4, L5, L6, L8 — 12 Turns 22 AWG IDIA 0.140″ Choke
N1, N2 — Type N Flange Mount, Omni Spectra
Q1 — Bias Transistor BD136 PNP
R2, R3, R4, R5 — 4.0 x 39 Ohm 1/8 W Chips in Parallel
R1a, R1b — 56 Ohm 1.0 W
TL1–TL8 — See Photomaster
Balun1, Balun2, Coax 1, Coax 2 — 2.20″ 50 Ohm 0.088″ o.d.
Balun1, Balun2, Coax 1, Coax 2 —
Board — 1/32″ Glass Teflon, ε
Symbol
IMD
G
η
ψ
pe
Min
8.0
30
—
No Degradation in Output Power
MOTOROLA RF DEVICE DATA
r
= 2.55″ Arlon (GX–0300–55–22)
Before and After Test
Typ
–32
9.0
40
Semi–rigid Coax, Micro Coax
Max
–28
—
—
Unit
dBc
dB
%