NE851M33-A CEL, NE851M33-A Datasheet - Page 4

• Manufacturer Part Number: NE851M33-A
• Description: TRANSISTOR NPN 2GHZ M33
• Manufacturer: CEL

Specifications of NE851M33-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2.5dB @ 2GHz
• Power - Max: 130mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M33
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 145
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 130 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS
Remark The graphs indicate nominal characteristics.
1,000
100
10
0.1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current I
1
C
10
(mA)
(T
A
=+25ºC, unless otherwise specified)
V
V
CE
CE
= 1 V
= 1 V
100
1,000
100
10
0.1
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Collector Current I
1
C
10
(mA)
V
CE
= 2 V
100