NE851M03-A CEL, NE851M03-A Datasheet - Page 2

• Manufacturer Part Number: NE851M03-A
• Description: TRANSISTOR NPN 2GHZ SOT-363
• Manufacturer: CEL

Specifications of NE851M03-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2.5dB @ 2GHz
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 145
• Mounting Style: SMD/SMT
• Configuration: Single
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Notes:
1. Operation in excess of any one of these parameters may result
2. With device mounted on 1.08 cm
TYPICAL PERFORMANCE CURVES
SYMBOLS
in permanent damage.
board.
V
V
V
T
P
T
CBO
CEO
EBO
I
STG
C
T
J
2
300
250
200
150
100
50
100
80
60
40
20
0
0
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
TOTAL POWER DISSIPATION vs.
CE
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, V
COLLECTOR CURRENT vs.
= 1 V
PARAMETERS
Ambient Temperature, T
AMBIENT TEMPERATURE
25
0.2
50
0.4
Mounted on Glass Epoxy PCB
(1.08 cm
75
2
2
X 1.0 mm (t) glass epoxy
0.6
x 1.0 mm(t) )
100
A
BE
UNITS
0.8
(°C)
mW
mA
°C
°C
125
V
V
V
(V)
1
150
1.0
(T
-65 to +150
RATINGS
A
= 25°C)
(T
100
200
150
9.0
5.5
1.5
A
= 25°C)
ORDERING INFORMATION
PART NUMBER
NE851M03-T1-A
1.0
0.8
0.6
0.4
0.2
60
50
40
30
20
10
REVERSE TRANSFR CAPACITANCE vs.
0
0
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR TO BASE VOLTAGE
Collector to Base Voltage, V
1
Collector to Emitter Voltage, V
1
COLLECTOR CURRENT vs.
QUANTITY
3 k pcs./reel
2
2
3
3
4
400 A
5
4
360 A
µ
320 A
6
µ
280 A
5
µ
I
B
CB
7
µ
= 40 A
240 A
200 A
f = 1 MHz
160 A
120 A
80 A
(V)
6
CE
µ
8
µ
µ
µ
µ
µ
(V)
9
7