NE68530-T1 CEL, NE68530-T1 Datasheet - Page 12
![TRANS NPN 2GHZ SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
NE68530-T1
Manufacturer Part Number
NE68530-T1
Description
TRANS NPN 2GHZ SOT-323
Manufacturer
CEL
Datasheet
1.NE68519-T1-A.pdf
(18 pages)
Specifications of NE68530-T1
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6V
Frequency - Transition
12GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.5dB @ 2GHz
Gain
7dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 10mA, 3V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
SOT-323
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NE68530-T1TR
NE68530-TR
NE68530TR
NE68530-TR
NE68530TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE68530-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
BJT NONLINEAR MODEL PARAMETERS
NE685 SERIES
NE68530 NONLINEAR MODEL
(1) Gummel-Poon Model
SCHEMATIC
Parameters
RBM
VAF
VAR
CJE
MJE
CJC
VJC
VJE
IKF
ISE
IKR
ISC
IRB
NR
BF
NF
NE
BR
RE
RB
NC
RC
IS
0.40e-12
0.18e-12
7.9e-13
Infinity
7e-16
0.009
0.19
2.19
1.08
12.4
8.34
0.81
0.75
109
Q1
1.3
0.5
15
10
10
1
1
0
2
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
ITF
XTI
FC
TR
EG
TF
KF
AF
Base
C
BEPKG
L
BX
2e-12
0.011
0.34
0.75
4.58
1e-9
1.11
Q1
0.5
5.2
0
0
0
0
0
3
0
1
L
B
(1)
C
C
CBPKG
CB
Emitter
L
L
E
EX
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
ADDITIONAL PARAMETERS
C
CE
Parameters
Parameter
time
capacitance
inductance
resistance
voltage
current
C
C
L
L
C
C
C
L
L
L
C
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
Q1
CEPKG
L
CX
0.05 to 3.0 GHz
V
10/25/96
CE
= 0.5 V to 3 V, I
Collector
seconds
farads
henries
ohms
volts
amps
0.13e-12
0.14e-12
0.41e-9
1.43e-9
0.12e-12
0.04e-12
0.04e-12
0.2e-9
0.2e-9
0.2e-9
C
68530
Units
= 0.5 mA to 10 mA