NE68019-T1 CEL, NE68019-T1 Datasheet - Page 15
![TRANS NPN 2GHZ SMD](/photos/5/65/56510/51-sc-90_sml.jpg)
NE68019-T1
Manufacturer Part Number
NE68019-T1
Description
TRANS NPN 2GHZ SMD
Manufacturer
CEL
Datasheet
1.NE68019-T1-A.pdf
(20 pages)
Specifications of NE68019-T1
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
10GHz
Noise Figure (db Typ @ F)
1.7dB ~ 1.9dB @ 1GHz ~ 2GHz
Gain
9.6dB ~ 13.5dB
Power - Max
100mW
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 3V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
Surface Mount
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
2SC5008
NE68019-T1TR
NE68019-TR
NE68019TR
NE68019-T1TR
NE68019-TR
NE68019TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE68019-T1-A
Manufacturer:
RENESAS
Quantity:
5 700
Company:
Part Number:
NE68019-T1-A
Manufacturer:
CEL
Quantity:
3 000
NE68033 NONLINEAR MODEL
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
VJC
IKR
ISC
IRB
IKF
ISE
NF
NE
BR
NR
RE
RB
BF
NC
RC
IS
0.358e-12
0.162e-12
3.84e-16
1.0e-14
4.01e-4
Infinity
Infinity
124.9
0.027
1.05
2.17
1.05
17.9
1.02
10.5
0.71
0.79
11.9
0.6
0.5
Q1
1
0
2
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
ITF
XTI
EG
FC
TF
TR
KF
AF
Base
C
BEPKG
L
0.635e-9
BX
8.7e-12
0.082
0.64
0.75
19.1
1.11
Q1
0.5
18
0
0
0
0
0
3
0
1
L
B
(1)
C
C
CBPKG
CB
Emitter
L
L
E
EX
ADDITIONAL PARAMETERS
UNITS
MODEL RANGE
Frequency:
Bias:
Date:
C
CE
Parameters
Parameter
time
capacitance
inductance
resistance
voltage
current
C
C
L
L
C
C
C
L
L
L
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
C
Q1
CEPKG
L
CX
0.05 to 3.0 GHz
V
7/97
CE
= 2.5 V to 6 V, I
Collector
0.08e-12
0.08e-12
0.65e-9
0.95e-9
0.1e-12
0.1e-12
0.01e-12
0.3e-9
0.5e-9
0.3e-9
seconds
farads
henries
ohms
volts
amps
Units
C
68033
= 0.3 mA to 20 mA