BFQ31ATA Diodes Zetex, BFQ31ATA Datasheet
BFQ31ATA
Manufacturer Part Number
BFQ31ATA
Description
TRANSISTOR UHF/VHF NPN SOT23-3
Manufacturer
Diodes Zetex
Datasheet
1.BFS17HTC.pdf
(2 pages)
Specifications of BFQ31ATA
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
600MHz
Noise Figure (db Typ @ F)
6dB @ 60MHz
Power - Max
330mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 3mA, 1V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BFQ31ATA
Manufacturer:
FSC
Quantity:
1 200
SOT23 NPN SILICON PLANAR
RF TRANSISTORS
ISSUE 4 – MARCH 2001
PARTMARKING DETAILS —
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
Spice parameter data is available upon request for this device
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector Cut-Off
Current
Static Forward Current
Transfer Ratio
BFS17L
BFS17H
Transition
Frequency
Feedback Capacitance
Output Capacitance
Input Capacitance
Noise Figure
Intermodulation
Distortion
amb
SYMBOL
I
h
f
-C
C
C
N
d
=25°C
CBO
T
FE
im
obo
ibo
re
BFS17L - E1L
BFS17H - E1H
MIN.
25
70
20
amb
TBA
TYP.
1.0
1.3
0.85
4.5
-45
SYMBOL
V
V
I
I
P
T
V
CM
C
tot
j
CBO
CEO
EBO
:T
= 25°C).
stg
MAX.
10
10
100
200
125
1.5
2.0
UNIT
nA
GHz
GHz
pF
pF
pF
dB
dB
A
-55 to +150
VALUE
CONDITIONS.
V
V
T
I
I
I
I
f=500MHz
I
f=500MHz
I
V
I
R
I
R
V
V
measured at f
330
C
2.5
C
C
C
C
C
V
C
C
25
15
50
25
CB
CB
amb
=2.0mA, V
CB
S
L
o
o
=2.0mA, V
=2.0mA, V
=25mA, V
=2.0mA, V
=25mA, V
=2.0mA, V
=10mA, V
EB
=100mV at f
=100mV at f
=50 , f=500MHz
=37.5 ,T
=10V, f=1MHz
=10V, I
=10V, I
BFS17H
=0.5V, f=1MHz
C
BFS17L
= 100°C
E
E
CE
=0
=0,
amb
CE
CE
CE
(2q-p)
CE
CE
CE
CE
=5V, f=1MHz
=1.0V
=5.0V
=6.0V
p
q
=1.0V
=1.0V
=5.0V
=5.0V
=183MHz
=200MHz
=25°C
UNIT
=217MHz
mW
mA
mA
°C
V
V
V
B
E
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BFQ31ATA Summary of contents
Page 1
SOT23 NPN SILICON PLANAR RF TRANSISTORS ISSUE 4 – MARCH 2001 PARTMARKING DETAILS — BFS17L - E1L BFS17H - E1H ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T ...
Page 2
BFS17L BFS17H TYPICAL CHARACTERISTICS 3 f=400MHz 2 V =10V 100 - Collector Current (mA f=1MHz 2.0 1.5 1.0 0 ...