ZUMTS17TA Diodes Zetex, ZUMTS17TA Datasheet
ZUMTS17TA
Manufacturer Part Number
ZUMTS17TA
Description
TRANSISTOR NPN 15V 25MA SC70-3
Manufacturer
Diodes Zetex
Datasheet
1.ZUMTS17HTC.pdf
(2 pages)
Specifications of ZUMTS17TA
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1.3GHz
Noise Figure (db Typ @ F)
4.5dB @ 500MHz
Power - Max
330mW
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 2mA, 1V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gain
-
Other names
ZUMTS17TR
SOT323 NPN SILICON PLANAR
RF TRANSISTORS
ISSUE 1 – DECEMBER 1998
PARTMARKING DETAIL —
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for this device
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector Cut-Off
Current
Static Forward Current
Transfer Ratio
ZUMTS17H
Transition
Frequency
Feedback Capacitance
Collector Capacitance
Emitter Capacitance
Noise Figure
Intermodulation
Distortion
amb
SYMBOL
I
h
f
-C
C
C
N
d
CBO
T
=25°C
FE
im
Tc
Te
re
ZUMTS17 - T4
ZUMTS17H - T4H
25
20
MIN.
70
amb
TYP.
1.0
1.3
0.85
4.5
-45
V
V
SYMBOL
V
I
I
P
T
CM
C
tot
j
CBO
CEO
EBO
:T
= 25°C).
stg
MAX.
10
10
150
125
200
1.5
2.0
nA
GHz
GHz
pF
pF
pF
dB
dB
UNIT
A
-55 to +150
VALUE
ZUMTS17H
CONDITIONS.
V
V
T
I
I
I
I
f=500MHz
I
f=500MHz
I
I
f=1MHz
I
f=1MHz
I
R
I
R
V
V
measured at f
330
2.5
C
E
C
C
C
C
C
C
C
C
25
15
50
25
amb
ZUMTS17
CB
CB
=2.0mA, V
S
L
o
o
=I
=I
=2.0mA, V
=25mA, V
=2.0mA, V
=2.0mA, V
=25mA, V
=2.0mA, V
=10mA, V
=100mV at f
=100mV at f
=37.5 ,T
=50 , f=500MHz
e
c
=10V, I
=10V, I
=0, V
=0, V
= 100°C
EB
CB
E
E
=5.0V,
=10V,
CE
=0
=0,
amb
CE
CE
CE
(2q-p)
CE
CE
CE
CE
=5V, f=1MHz
=1.0V
=5.0V
=6.0V
p
q
=1.0V
=1.0V
=5.0V
=5.0V
=183MHz
=200MHz
=25°C
UNIT
mW
=217MHz
mA
mA
°C
V
V
V
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ZUMTS17TA Summary of contents
Page 1
SOT323 NPN SILICON PLANAR RF TRANSISTORS ISSUE 1 – DECEMBER 1998 PARTMARKING DETAIL — ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb Operating and Storage Temperature Range ...
Page 2
ZUMTS17 ZUMTS17H TYPICAL CHARACTERISTICS 3 f=400MHz 0 Collector Current (mA f=1MHz 2.0 1.5 1 ...