MMBTH10M3T5G ON Semiconductor, MMBTH10M3T5G Datasheet

TRANS NPN VHF/UHF 25V SOT-723

MMBTH10M3T5G

Manufacturer Part Number
MMBTH10M3T5G
Description
TRANS NPN VHF/UHF 25V SOT-723
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBTH10M3T5G

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
25V
Frequency - Transition
650MHz
Power - Max
265mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 4mA, 10V
Mounting Type
Surface Mount
Package / Case
SOT-723
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector (ic) (max)
-
Gain
-
Noise Figure (db Typ @ F)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBTH10M3T5G
Manufacturer:
ON Semiconductor
Quantity:
3 650
Part Number:
MMBTH10M3T5G
Manufacturer:
ON
Quantity:
30 000
MMBTH10M3T5G
NPN VHF/UHF Transistor
SOT−23 three−leaded device. It is designed for general purpose
VHF/UHF applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 0
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter−Base Voltage
Total Device Dissipation
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage Temperature
The MMBTH10M3T5G device is a spin−off of our popular
Reduces Board Space
This is a Halide−Free Device
This is a Pb−Free Device
FR−5 Board (Note 1)
T
Derate above 25°C
Junction−to−Ambient
Alumina Substrate, (Note 2) T
Derate above 25°C
Junction−to−Ambient
A
= 25°C
Characteristic
Rating
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
qJA
qJA
D
D
stg
−55 to
Value
+150
Max
265
470
640
195
3.0
2.1
5.1
25
30
1
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBTH10M3T5G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
Device
1
ORDERING INFORMATION
AJ
M
2
http://onsemi.com
BASE
1
= Specific Device Code
= Date Code
CASE 631AA
(Pb−Free)
SOT−723
Package
SOT−723
STYLE 1
COLLECTOR
Publication Order Number:
EMITTER
3
2
8000/Tape & Reel
MMBTH10M3/D
Shipping
MARKING
DIAGRAM
AJ M

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MMBTH10M3T5G Summary of contents

Page 1

... MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin−off of our popular SOT−23 three−leaded device designed for general purpose VHF/UHF applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space premium. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (I = 1.0 mAdc Collector−Base Breakdown Voltage (I = 100 μAdc Emitter−Base Breakdown Voltage ( μAdc ...

Page 3

COMMON−BASE y PARAMETERS versus FREQUENCY ( 100 200 300 400 f, FREQUENCY (MHz) Figure 1. Rectangular Form ...

Page 4

COMMON−BASE y PARAMETERS versus FREQUENCY ( 5.0 4.0 3 2.0 1.0 0 100 200 300 400 f, FREQUENCY (MHz) Figure 5. Rectangular Form 10 9.0 8.0 7.0 6.0 5 4.0 3.0 2.0 1.0 0 ...

Page 5

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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