AT-41486-TR1G Avago Technologies US Inc., AT-41486-TR1G Datasheet

TRANS NPN BIPO 12V 60MA 86-SMD

AT-41486-TR1G

Manufacturer Part Number
AT-41486-TR1G
Description
TRANS NPN BIPO 12V 60MA 86-SMD
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of AT-41486-TR1G

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
1.4dB ~ 3dB @ 1GHz ~ 4GHz
Gain
9dB ~ 18dB
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 10mA, 8V
Current - Collector (ic) (max)
60mA
Mounting Type
Surface Mount
Package / Case
4-SMD (86 Plastic)
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
12V
Transition Frequency Typ Ft
8GHz
Power Dissipation Pd
500mW
Dc Collector Current
60mA
Dc Current Gain Hfe
150
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT-41486-TR1G
Manufacturer:
AD
Quantity:
1 145
Part Number:
AT-41486-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
AT-41486
Up to 6 GHz Low Noise Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-41486 is a general purpose NPN bipolar
transistor that offers excellent high frequency perfor-
mance. The AT-41486 is housed in a low cost surface
mount .085" diameter plastic package. The 4 micron
emitter-to-emitter pitch enables this transistor to be
used in many different functions. The 14 emitter finger
interdigitated geometry yields an intermediate sized
transistor with impedances that are easy to match for
low noise and moderate power applications. Applica-
tions include use in wireless systems as an LNA, gain
stage, buffer, oscillator, and mixer. An optimum noise
match near 50 Ω at 900 MHz, makes this device easy to
use as a low noise amplifier.
The AT-41486 bipolar transistor is fabricated using
Avago’s 10 GHz f
cess. The die is nitride passivated for surface protec-
tion. Excellent device uniformity, performance and
reliability are produced by the use of ion-implantation,
self-alignment techniques, and gold metalization in the
fabrication of this device.
T
Self-Aligned-Transistor (SAT) pro-
Features
• Low Noise Figure:
• High Associated Gain:
• High Gain-Bandwidth Product: 8.0 GHz Typical f
• Surface Mount Plastic Package
• Tape-and-Reel Packaging Option Available
• Lead-free Option Available
86 Plastic Package
Pin Connections
BASE
1.4 dB Typical at 1.0 GHz
1.7 dB Typical at 2.0 GHz
18.0 dB Typical at 1.0 GHz
13.0 dB Typical at 2.0 GHz
1
4
EMITTER
2
EMITTER
3
COLLECTOR
T

Related parts for AT-41486-TR1G

AT-41486-TR1G Summary of contents

Page 1

... Applica- tions include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 Ω at 900 MHz, makes this device easy to use as a low noise amplifier. The AT-41486 bipolar transistor is fabricated using Avago’ ...

Page 2

... T Storage Temperature STG Ordering Information Part Numbers No. of Devices AT-41486-BLK 100 AT-41486-BLKG 100 AT-41486-TR1 1000 AT-41486-TR1G 1000 AT-41486-TR2 4000 AT-41486-TR2G 4000 Note: Order part number with a “G” suffix if lead-free option is desired. Electrical Specifications 25°C A Symbol Parameters and Test Conditions ...

Page 3

... AT-41486 Typical Performance Ω 0.5 1.0 2.0 3.0 4.0 5.0 FREQUENCY (GHz) Figure 1. Noise Figure and Associated Gain vs. Frequency mA 1dB 16 G 1dB (mA) C Figure 4. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency 2.0 GHz. = 25° (mA) C Figure 2. Optimum Noise Figure and Associated Gain vs ...

Page 4

... AT-41486 Typical Scattering Parameters Ω 25° Freq GHz Mag. Ang. 0.1 .74 -38 0.5 .59 -127 1.0 .56 -168 1.5 .57 169 2.0 .62 152 2.5 .63 142 3.0 .64 130 3.5 .68 122 4.0 .71 113 4.5 .74 105 5.0 .77 99 5.5 .79 93 6.0 .81 87 AT-41486 Typical Scattering Parameters Ω, T ...

Page 5

... MIN (0.012 MIN) DIMENSIONS ARE IN MILLIMETERS (INCHES) For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries. ...

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