UPA807T-A CEL, UPA807T-A Datasheet - Page 2

• Manufacturer Part Number: UPA807T-A
• Description: TRANSISTOR NPN 13GHZ SOT363
• Manufacturer: CEL

Specifications of UPA807T-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 3V
• Frequency - Transition: 13GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2dB @ 2GHz
• Power - Max: 60mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 7mA, 2V
• Current - Collector (ic) (max): 10mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.01 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Note: 1.Operation in excess of any one of these parameters may
TYPICAL PERFORMANCE CURVES
UPA807T
SYMBOLS
V
V
V
T
PT
CBO
CEO
T
EBO
I
STG
C
J
result in permanent damage.
200
100
25
20
15
10
5
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
0
0
COLLECTOR TO EMITTER VOLTAGE
2 Elements in Total
Per Element
Collector to Emitter Voltage, V
TOTAL POWER DISSIPATION vs.
PARAMETERS
Ambient Temperature, T
COLLECTOR CURRENT vs.
AMBIENT TEMPERATURE
1.0
1 Die
2 Die
50
2.0
100
3.0
l
60 mW
30 mW
B
UNITS
200 µA
180 µA
160 µA
140 µA
120 µA
100 µA
= 20 µA
80 µA
60 µA
40 µA
mW
mW
A
mA
°C
°C
V
V
V
(°C)
CE
(V)
1
(T
-65 to +150
150
RATINGS
A
(T
= 25°C)
150
10
30
60
5
3
2
A
= 25˚C)
500
200
100
50
20
10
50
40
30
20
10
0
1
V
CE
Base to Emitter Voltage, V
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
= 2 V
2
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Collector Current, lc (mA)
5
V
10
0.5
CE
= 1 V
20
V
BE
CE
50
= 2 V
(V)
100
1.0